Lake Oswego, OR, United States of America

Grant M Kloster

This inventor holds 59 USPTO granted patents and 4 published patent applications and 1 EPO patent, primarily in Semiconductor Fabrication (CPC class H01L). Top assignee: Intel Corporation. Active years: 2003-2025.

USPTO Granted Patents = 59 (Patent Applications = 4)

% Patents Active = 33.9

EPO Patents = 1 (Patent Applications = 5)

Average Co-Inventor Count = 3.5

ph-index = 13

Forward Citations = 1,411(Granted Patents)

Forward Citations (Not Self Cited) = 1,369(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Oswego, OR (US) (2005)
Hillsboro, OR (US) (2006 - 2007)
Hillboro, OR (US) (2007)
Lake Oswego, OR (US) (2003 - 2022)

Company Filing History:

59 out of 56,240

Intel Corporation

patents

Years Active: 2003-2025

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Areas of Expertise:

Wafer Treatments

Maskless Lithography

Gate Spacers

Dielectric Materials

Atomic Layer Deposition

Chemical Vapor Deposition

Porous Dielectrics

Interconnect Structures

Low-K Dielectrics

Silane Coupling

Zeolite Enhancements

Stacked Devices

59 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12381161 - Backside wafer treatments to reduce distortions and overlay errors during wafer chucking (2025-08-05),

2. 12165987 - Frame reveals with maskless lithography in the manufacture of integrated circuits (2024-12-10),

3. 11532724 - Selective gate spacers for semiconductor devices (2022-12-20),

4. 10971600 - Selective gate spacers for semiconductor devices (2021-04-06),

5. 10756215 - Selective deposition utilizing sacrificial blocking layers for semiconductor devices (2020-08-25),

6. 10396176 - Selective gate spacers for semiconductor devices (2019-08-27),

7. 10243080 - Selective deposition utilizing sacrificial blocking layers for semiconductor devices (2019-03-26),

8. 9932671 - Precursor and process design for photo-assisted metal atomic layer deposition (ALD) and chemical vapor deposition (CVD) (2018-04-03),

9. 9530733 - Forming layers of materials over small regions by selective chemical reaction including limiting enchroachment of the layers over adjacent regions (2016-12-27),

10. 8154121 - Polymer interlayer dielectric and passivation materials for a microelectronic device (2012-04-10),

11. 7658975 - Sealing porous dielectric materials (2010-02-09),

12. 7560165 - Sealing porous dielectric materials (2009-07-14),

13. 7544896 - Forming a porous dielectric layer and structures formed thereby (2009-06-09),

14. 7456490 - Sealing porous dielectrics with silane coupling reagents (2008-11-25),

15. 7422020 - Aluminum incorporation in porous dielectric for improved mechanical properties of patterned dielectric (2008-09-09),

Title: Grant M Kloster - Pioneering Inventor from Lake Oswego

Introduction: Grant M Kloster is a distinguished inventor hailing from Lake Oswego, Oregon. His innovative spirit and dedication to creating groundbreaking solutions have solidified his reputation in the world of patents and inventions.

Latest Patents: Grant M Kloster's latest patents showcase his commitment to pushing the boundaries of technology and design. His recent inventions have garnered attention for their creativity and practicality, making a significant impact in their respective industries.

Career Highlights: Throughout his illustrious career, Grant M Kloster has accumulated a remarkable number of patents that have revolutionized various sectors. His contributions have not only improved existing products but have also paved the way for new advancements in technology.

Collaborations: Grant M Kloster's collaborative efforts with leading companies, research institutions, and universities have been instrumental in bringing his inventions to life. His ability to work effectively in multidisciplinary teams has led to the successful development and commercialization of innovative products.

Conclusion: Grant M Kloster's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of inventors. His remarkable achievements continue to inspire aspiring inventors and shape the future of technology.