The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2009
Filed:
Mar. 03, 2006
Applicants:
Boyan Boyanov, Portland, OR (US);
Grant M. Kloster, Lake Oswego, OR (US);
Vijay Ramachandrarao, Hillsboro, OR (US);
Hyun-mog Park, Portland, OR (US);
Inventors:
Boyan Boyanov, Portland, OR (US);
Grant M. Kloster, Lake Oswego, OR (US);
Vijay Ramachandrarao, Hillsboro, OR (US);
Hyun-Mog Park, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a dielectric layer utilizing a plasma, wherein the plasma comprises a porogen and substantially no oxidizing agent, and then applying energy to the dielectric layer, wherein the porogen disposed within the dielectric layer decomposes to form at least one pore.