Hyun-Mog Park

This inventor holds 25 USPTO granted patents and 1 published patent application, primarily in Vertical Memory Devices. Top assignees: Intel Corporation, Samsung Electronics Co., Ltd.. Active years: 2003-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyun-Mog Park. Retrieved from https://idiyas.com/inventor/hyun-mog-park

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 25 (Patent Applications = 1)

% Patents Active = 40.0

Average Co-Inventor Count = 2.2

ph-index = 7

Forward Citations = 392(Granted Patents)

Location History:

Beaverton, OR (US) (2003 - 2008)
Portland, OR (US) (2007 - 2009)
Seongbuk-gu, KR (2010)
Seoul, KR (2007 - 2021)

Company Filing History:

Samsung Electronics Co., Ltd.

patents

Years Active: 2003-2021

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Areas of Expertise:

Vertical Memory Device

NAND-Type Nonvolatile Memory

Three-Dimensional Semiconductor

Porous Dielectric Layer

Air Gap Interconnect

Etch Process

Integrated Circuit Fabrication

Plasma-Induced Surface Polymerization

Masking Layer

Line Edge Roughness

Contact Plugs

Vaporized Material

25 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11011536 - Vertical memory device (2021-05-18),

2. 10937756 - Method of aligning wafers, method of bonding wafers using the same, and apparatus for performing the same (2021-03-02),

3. 10854622 - Vertical memory devices and methods of manufacturing the same (2020-12-01),

4. 10741571 - Vertical memory devices and methods of manufacturing the same (2020-08-11),

5. 10615124 - Three-dimensional semiconductor device including a cell array region and a contact region (2020-04-07),

6. 10396035 - Three-dimensional semiconductor device having contact plugs penetrating upper adjacent electrodes (2019-08-27),

7. 7675125 - NAND-type nonvolatile memory device and related method of manufacture (2010-03-09),

8. 7544896 - Forming a porous dielectric layer and structures formed thereby (2009-06-09),

9. 7335586 - Sealing porous dielectric material using plasma-induced surface polymerization (2008-02-26),

10. 7332406 - Air gap interconnect structure and method (2008-02-19),

11. 7303648 - Via etch process (2007-12-04),

12. 7238604 - Forming thin hard mask over air gap or porous dielectric (2007-07-03),

13. 7220668 - Method of patterning a porous dielectric material (2007-05-22),

14. 7179755 - Forming a porous dielectric layer and structures formed thereby (2007-02-20),

15. 7176122 - Dielectric with sidewall passivating layer (2007-02-13),

Title: Hyun-Mog Park: Innovator in Vertical Memory Technology

Introduction

Hyun-Mog Park is a renowned inventor based in Seoul, South Korea, recognized for his significant contributions to the field of memory devices. With a remarkable portfolio that includes 25 patents to his name, Park has established himself as a pivotal figure in semiconductor technology. His innovations have been integral in advancing the efficiency and performance of memory devices used in modern computing.

Latest Patents

Among Hyun-Mog Park's notable patents is the creation of a vertical memory device. This device features gate electrodes arranged with specific spacing in a designated direction and utilizes insulation patterns that contribute to its functionality. The innovative design includes a channel structure extending through gate and insulation patterns, allowing for enhanced memory performance.

Another patent details a method and apparatus for aligning wafers. In this process, alignment keys from two wafers are strategically aligned through exposure via alignment holes. This ensures precision in the alignment process, which is critical for the successful bonding of wafers in semiconductor manufacturing.

Career Highlights

Hyun-Mog Park has had an impressive career, working for prominent technology companies such as Intel Corporation and Samsung Electronics Co., Ltd. His experiences at these industry-leading organizations have allowed him to refine his expertise in semiconductor technology and develop cutting-edge inventions.

Collaborations

Throughout his career, Park has collaborated with notable professionals in the field, including Grant M. Kloster and Vijayakumar S. Ramachandrarao. These collaborations have fostered an environment of creativity and innovation, leading to the development of patentable inventions that push the boundaries of technology.

Conclusion

Hyun-Mog Park's contributions to the field of vertical memory devices underscore his status as an influential inventor in the semiconductor industry. His dedication to innovation and his impressive patent portfolio reflect his commitment to advancing technology. As he continues to develop new solutions, the future of memory devices is sure to be shaped by his inventive spirit.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

1 patent pending: