The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2007
Filed:
Apr. 24, 2003
Grant M. Kloster, Lake Oswego, OR (US);
Kevin P. O'brien, Portland, OR (US);
David H. Gracias, Portland, OR (US);
Hyun-mog Park, Beaverton, OR (US);
Vijayakumar S. Ramachandrarao, Hillsboro, OR (US);
Grant M. Kloster, Lake Oswego, OR (US);
Kevin P. O'Brien, Portland, OR (US);
David H. Gracias, Portland, OR (US);
Hyun-Mog Park, Beaverton, OR (US);
Vijayakumar S. Ramachandrarao, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A thin hard mask is formed over a semiconductor substrate. The thin hard mask allows diffusion of a sacrificial material or pore-forming agent therethrough to form an underlying air gap or porous dielectric region. The thin hard mask may be a polymer or an initially porous material that may be later densified. The thin hard mask may be used to prevent etch steps used in forming an unlanded via from reaching layers below the hard mask.