The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2007
Filed:
Jun. 28, 2005
Applicants:
Hyun-mog Park, Seoul, KR;
Boyan Boyanov, Portland, OR (US);
Grant M. Kloster, Lake Oswego, OR (US);
Vijayakumar S. Ramachandrarao, Portland, OR (US);
Inventors:
Hyun-Mog Park, Seoul, KR;
Boyan Boyanov, Portland, OR (US);
Grant M. Kloster, Lake Oswego, OR (US);
Vijayakumar S. RamachandraRao, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 24/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of patterning a porous dielectric material that includes an ash process to treat the porous dielectric material. The treated porous dielectric material allows for the formation of a substantially continuous barrier layer, which can inhibit diffusion of, for example, a conductive material into to the dielectric material. Other embodiments are described and claimed.