The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2008
Filed:
Nov. 10, 2004
Applicants:
Hyun-mog Park, Beaverton, OR (US);
Grant M. Kloster, Lake Oswego, OR (US);
Inventors:
Hyun-Mog Park, Beaverton, OR (US);
Grant M. Kloster, Lake Oswego, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
A low-k dielectric sacrificial material is formed within a microelectronic structure covered with a layer defining an exhaust vent. At an appropriate time, the underlying sacrificial material is decomposed and exhausted away through the exhaust vent. Residue from the exhausted sacrificial material accumulates at the vent location during exhaustion until the vent is substantially occluded. As a result, an air gap is created having desirable characteristics as a dielectric.