The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2008
Filed:
Jun. 10, 2005
Vijayakumar S. Ramachandrarao, Hillsboro, OR (US);
Boyan Boyanov, Portland, OR (US);
Grant Kloster, Lake Oswego, OR (US);
Hyun-mog Park, Portland, OR (US);
Vijayakumar S. RamachandraRao, Hillsboro, OR (US);
Boyan Boyanov, Portland, OR (US);
Grant Kloster, Lake Oswego, OR (US);
Hyun-Mog Park, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A method for sealing a porous dielectric layer atop a substrate, wherein the dielectric layer is patterned to form at least a trench and at least a via, comprises applying a first plasma to a surface of the dielectric layer to silanolize the surface, treating the surface of the dielectric layer with a silazane to form a monolayer of silane molecules on the surface, and applying a second plasma to the surface of the dielectric layer to induce a polymerization of at least a portion of the silane molecules. The polymerized silane molecules form a cross-linked matrix that builds over a substantial portion of the surface of the dielectric layer and seals at least some of the exposed pores.