The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 10, 2012

Filed:

Feb. 26, 2008
Applicants:

Kunal Shah, Hillsboro, OR (US);

Michael Haverty, Mountain View, CA (US);

Sadasivan Shankar, Cupertino, CA (US);

Doug Ingerly, Portland, OR (US);

Grant Kloster, Lake Oswego, OR (US);

Inventors:

Kunal Shah, Hillsboro, OR (US);

Michael Haverty, Mountain View, CA (US);

Sadasivan Shankar, Cupertino, CA (US);

Doug Ingerly, Portland, OR (US);

Grant Kloster, Lake Oswego, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract

Polymer interlayer dielectric and passivation materials for a microelectronic device are generally described. In one example, an apparatus includes one or more interconnect structures of a microelectronic device and one or more polymeric dielectric layers coupled with the one or more interconnect structures, the polymeric dielectric layers including copolymer backbones having a first monomeric unit and a second monomeric unit wherein the first monomeric unit has a different chemical structure than the second monomeric unit and wherein the copolymer backbones are cross-linked by a first cross-linker or a second cross-linker, or combinations thereof.


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