The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2021
Filed:
Jul. 19, 2019
Intel Corporation, Santa Clara, CA (US);
Scott B. Clendenning, Portland, OR (US);
Szuya S. Liao, Hillsboro, OR (US);
Florian Gstrein, Portland, OR (US);
Rami Hourani, Portland, OR (US);
Patricio E. Romero, Portland, OR (US);
Grant M. Kloster, Lake Oswego, OR (US);
Martin M. Mitan, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Techniques related to forming selective gate spacers for semiconductor devices and transistor structures and devices formed using such techniques are discussed. Such techniques include forming a blocking material on a semiconductor fin, disposing a gate having a different surface chemistry than the blocking material on a portion of the blocking material, forming a selective conformal layer on the gate but not on a portion of the blocking material, and removing exposed portions of the blocking material.