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For the Inventor, By the Inventor

Portland, OR, United States of America

Rami Hourani

USPTO Granted Patents = 57 

 

Average Co-Inventor Count = 5.7

ph-index = 4

Forward Citations = 46(Granted Patents)

Forward Citations (Not Self Cited) = 37(Dec 10, 2025)


Location History:

  • Portland, OR (US) (2016 - 2024)
  • Beaverton, OR (US) (2020 - 2024)
  • Santa Clara, CA (US) (2023 - 2024)

Company Filing History:

goldMedal40 out of 54,750 
 
Intel Corporation
 patents
silverMedal16 out of 13,713 
 
Applied Materials, Inc.
 patents
where one patent can have more than one assignee

Years Active: 2016-2025

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Areas of Expertise:
Integrated Circuit Structure
Inkjet Printing
Optical Device Improvement
Nanoimprint Lithography
Dielectric Materials
Transistor Gate Structures
Vertical Thin Film Transistors
Conductive Via Fabrication
Self-Aligned Gate Structures
Optical Film Performance
Grating Replication
Molecular Domains
57 patents (USPTO):Explore Patents
1. 12412838 - Integrated circuit structure with filled recesses (2025-09-09),
2. 12384185 - Methods, systems, and apparatus for inkjet printing self-assembled monoloayer (SAM) structures on substrates (2025-08-12),
3. 12372792 - High index edge blackening material (2025-07-29),
4. 12353009 - Total or local thickness variation for optical devices (2025-07-08),
5. 12341061 - Bottom-up fill dielectric materials for semiconductor structure fabrication and their methods of fabrication (2025-06-24),
6. 12249489 - Optical device improvement (2025-03-11),
7. 12242186 - Methods for increasing the density of high-index nanoimprint lithography films (2025-03-04),
8. 12208637 - Patterning of optical device films via inkjet soluble mask, deposition, and lift-off (2025-01-28),
9. 12121925 - Edge blackening for optical devices (2024-10-22),
10. 12110582 - Interfacial layer for optical film performance (2024-10-08),
11. 12109641 - Optical device having structural and refractive index gradation, and method of fabricating the same (2024-10-08),
12. 12087836 - Contact over active gate structures with metal oxide-caped contacts to inhibit shorting (2024-09-10),
13. 12080639 - Contact over active gate structures with metal oxide layers to inhibit shorting (2024-09-03),
14. 12077860 - Doped amorphous optical device films and deposition via incorporation of dopant atoms (2024-09-03),
15. 12044963 - High refractive index imprint compositions and materials and processes for making the same (2024-07-23),

Title: Rami Hourani: Innovator in Integrated Circuit Technologies

Introduction

Rami Hourani is a notable inventor based in Portland, OR, known for his significant contributions to the field of integrated circuit technologies. With a remarkable portfolio of 39 patents, he has established himself as an influential figure in engineering and innovation. His work primarily focuses on advanced contact over active gate structures, which are pivotal for enhancing the performance and reliability of integrated circuits.

Latest Patents

Rami's latest innovations include two groundbreaking patents:

1. **Contact over Active Gate Structures with Metal Oxide-Caped Contacts to Inhibit Shorting** - This patent details a structure composed of gate insulating layers and conductive trench contacts, each featuring a protective metal oxide cap. The design aims to prevent shorting and improve the functionality of integrated circuits.

2. **Contact over Active Gate Structures with Metal Oxide Layers to Inhibit Shorting** - Similar to the first, this patent describes an integrated circuit architecture with metal oxide layers on trench contacts, providing essential protective features to enhance circuit performance.

Career Highlights

Rami Hourani is currently employed at Intel Corporation, where he contributes to advancing technologies that drive the digital world. His extensive experience in engineering and product development at a leading semiconductor company underscores his role as a vital contributor to innovation in the tech industry.

Collaborations

Throughout his career, Rami has collaborated with esteemed colleagues such as Florian Gstrein and Eungnak Han. These professional partnerships have facilitated the exchange of ideas and the successful development of cutting-edge technologies, further cementing Rami's position in the field.

Conclusion

Rami Hourani’s innovative spirit and dedication to advancing integrated circuit technologies make him a significant figure in the realm of inventions and patents. His contributions not only reflect his expertise but also serve to inspire future innovations in the technology sector. As he continues to evolve in his career at Intel Corporation, the impact of his work will undoubtedly shape the future of integrated circuits.

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