Portland, OR, United States of America

Rami Hourani

This inventor holds 60 USPTO granted patents and 19 published patent applications and 6 EPO patents, primarily in Optical Devices. Top assignees: Intel Corporation, Applied Materials, Inc., Sk Hynix Nand Product Solutions Corp. (Dba Solidigm). Active years: 2016-2026.

USPTO Granted Patents = 60 

% Patents Active = 88.3

 

Average Co-Inventor Count = 5.7

ph-index = 4

Forward Citations = 55(Granted Patents)

Forward Citations (Not Self Cited) = 37(Dec 10, 2025)


Location History:

  • Portland, OR (US) (2016 - 2024)
  • Beaverton, OR (US) (2020 - 2024)
  • Santa Clara, CA (US) (2023 - 2024)

Company Filing History:


Years Active: 2016-2026

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Areas of Expertise:
Optical Devices
Semiconductor Structures
Inkjet Printing
High Refractive Index
Nanoimprint Lithography
Dielectric Materials
Gate Structures
Interconnect Fabrication
Self-Aligned Architectures
Edge Blackening
Conductive Vias
Patterning Techniques
60 patents (USPTO):Explore Patents

Title: Rami Hourani: Innovator in Integrated Circuit Technologies

Introduction

Rami Hourani is a notable inventor based in Portland, OR, known for his significant contributions to the field of integrated circuit technologies. With a remarkable portfolio of 39 patents, he has established himself as an influential figure in engineering and innovation. His work primarily focuses on advanced contact over active gate structures, which are pivotal for enhancing the performance and reliability of integrated circuits.

Latest Patents

Rami's latest innovations include two groundbreaking patents:

1. **Contact over Active Gate Structures with Metal Oxide-Caped Contacts to Inhibit Shorting** - This patent details a structure composed of gate insulating layers and conductive trench contacts, each featuring a protective metal oxide cap. The design aims to prevent shorting and improve the functionality of integrated circuits.

2. **Contact over Active Gate Structures with Metal Oxide Layers to Inhibit Shorting** - Similar to the first, this patent describes an integrated circuit architecture with metal oxide layers on trench contacts, providing essential protective features to enhance circuit performance.

Career Highlights

Rami Hourani is currently employed at Intel Corporation, where he contributes to advancing technologies that drive the digital world. His extensive experience in engineering and product development at a leading semiconductor company underscores his role as a vital contributor to innovation in the tech industry.

Collaborations

Throughout his career, Rami has collaborated with esteemed colleagues such as Florian Gstrein and Eungnak Han. These professional partnerships have facilitated the exchange of ideas and the successful development of cutting-edge technologies, further cementing Rami's position in the field.

Conclusion

Rami Hourani’s innovative spirit and dedication to advancing integrated circuit technologies make him a significant figure in the realm of inventions and patents. His contributions not only reflect his expertise but also serve to inspire future innovations in the technology sector. As he continues to evolve in his career at Intel Corporation, the impact of his work will undoubtedly shape the future of integrated circuits.

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