The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2025

Filed:

Jun. 18, 2019
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Kevin L. Lin, Beaverton, OR (US);

Nafees A. Kabir, Portland, OR (US);

James Munro Blackwell, Portland, OR (US);

Rami Hourani, Beaverton, OR (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/522 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 23/53295 (2013.01); H01L 23/3128 (2013.01); H01L 23/5226 (2013.01); H01L 24/09 (2013.01); H01L 24/17 (2013.01); H01L 25/0655 (2013.01); H01L 25/50 (2013.01); H01L 2224/0401 (2013.01);
Abstract

Disclosed herein are IC structures, packages, and devices that include recesses processed via selective growth. An example integrated circuit (IC) structure, includes a first dielectric material, a second dielectric material on the first dielectric material, and a recess in the second dielectric material, wherein the recess includes a bottom, a top, and sidewalls. The IC further includes a first material within the recess and at a bottom of the recess, wherein the first material includes a metal and oxygen, a self-assembled monolayer (SAM) material, or an organic material, and a second material within the recess and between the first material and the top of the recess, wherein the second material is in contact with the sidewalls of the recess.


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