Intel Corporation

Applied Materials, Inc.

Tahoe Research, Ltd.

Rami Hourani

Florian Gstrein

Kevin Lai Lin

Eungnak Han

James M Blackwell

Ludovic Godet

Robert L Bristol

Manish Chandhok

Scott Bruce Clendenning

Marie Krysak

Andrew Ceballos

Grant M Kloster

Richard E Schenker

Szuya S Liao

Patricio E Romero

Kenichi Ohno

Gurpreet Singh

Amita Joshi

Ruth Amy Brain

Yingdong Luo

Nafees Kabir

Takashi Kuratomi

Martin M Mitan

Xiaopei Deng

Mark T Bohr

Daihua Zhang

Kangkang Wang

Karl J Armstrong

Yige Gao

Abhishek A Sharma

Charles Henry Wallace

Jeanette M Roberts

Paul Anton Nyhus

Benjamin B Riordon

Miriam Ruth Reshotko

Yuriy Melnik

Tristan A Tronic

James D Strassner

Jeffery D Bielefeld

Gopinath Bhimarasetti

Jasmeet S Chawla

Sudipto Naskar

Kang Luo

Richard F Vreeland

Yaseer Arafath Ahamed

Tayseer Mahdi

Todd R Younkin

Zhengping Yao

Shane M Harlson

Giselle Elbaz

Jinyu Lu

Jingyi Yang

Alexia Adilene Portillo Rivera

Gilbert W Dewey

Ravi Pillarisetty

Brian S Doyle

Willy Rachmady

Matthew V Metz

Sivapackia Ganapathiappan

Rishabh Mehandru

Noriyuki Sato

Prashant Majhi

Aaron D Lilak

Kevin O'Brien

Mauro J Kobrinsky

Elijah V Karpov

Leonard P Guler

Hui Jae Yoo

Samarth Bhargava

Mingwei Zhu

Yue Chen

Ehren Mannebach

Anh Phan

Jinxin Fu

Kevin Messer

Mohit K Haran

David Masayuki Ishikawa

Erica Chen

Stephanie A Bojarski

Zihao Yang

Curtis W Ward

Jinrui Guo

Jessica M Torres

Chi-Hwa Tsang

Yongmei Chen

Reken Patel

Brian Alexander Cohen

Michael J Leeson

David Alexander Sell

Kiran Chikkadi

Ian Matthew McMackin

Lukas M Baumgartel

Nai-Wen Pi

Cen Tan

Fariah Hayee

Thinh Nguyen

Diane Lancaster

Qun Jing

James Munro Blackwell

Disclosed herein are IC structures, packages, and devices that include recesses processed via selective growth. An example integrated circuit (IC) structure, includes a first dielectric material, a second dielectric material on the first dielectric material, and a recess in the second dielectric material, wherein the recess includes a bottom, a top, and sidewalls. The IC further includes a first material within the recess and at a bottom of the recess, wherein the first material includes a metal and oxygen, a self-assembled monolayer (SAM) material, or an organic material, and a second material within the recess and between the first material and the top of the recess, wherein the second material is in contact with the sidewalls of the recess.

Integrated circuit structure with filled recesses

Embodiments of the present disclosure relate to methods, systems, and apparatus for inkjet printing self-assembled monolayer (SAM) structures on substrates. In one embodiment, which can be combined with other embodiments, one or more SAM layers are printed on a substrate surface of a substrate in a localized manner such that a portion of the substrate surface is left exposed to a processing region of the inkjet chamber. The printing includes spraying one or more subsections of the substrate surface with an ink, the ink having a SAM composition. The SAM composition includes an active component, and a hydrophobic tail.

Methods, systems, and apparatus for inkjet printing self-assembled monoloayer (SAM) structures on substrates

Embodiments described herein include a waveguide combiner having an edge coated with an optically absorbent composition and a method of coating the edge of the waveguide combiner with the optically absorbent composition. The optically absorbent composition includes one or more types of nanoparticles or microparticles, at least one of one or more dyes or one or more pigments, and a polymer matrix of one or more binders. The method includes producing an optically absorbent formulation. The optically absorbent formulation includes one or more types of particles, at least one of one or more dyes or one or more pigments, one or more binders, and one or more solvents. The optically absorbent formulation is applied on an edge of a waveguide combiner using an edge blackening tool. The formulation is cured with radiation to form the optically absorbent composition.

High index edge blackening material

Embodiments of the present disclosure generally relate to methods for forming a waveguide. Methods may include measuring a waveguide substrate, the waveguide having a substrate thickness distribution; and depositing an index-matched layer onto a surface of the waveguide, the index-matched layer having a first surface disposed on the waveguide substrate and a second surface opposing the first surface, wherein the index-matched layer is disposed only over a portion of the waveguide substrate, and a device slope of a second surface of the index-matched layer is substantially the same as the waveguide slope of the first surface of the waveguide.

Total or local thickness variation for optical devices

Bottom-up fill dielectric materials for semiconductor structure fabrication, and methods of fabricating bottom-up fill dielectric materials for semiconductor structure fabrication, are described. In an example, a method of fabricating a dielectric material for semiconductor structure fabrication includes forming a trench in a material layer above a substrate. A blocking layer is formed partially into the trench along upper portions of sidewalls of the trench. A dielectric layer is formed filling a bottom portion of the trench with a dielectric material up to the blocking layer. The blocking layer is removed. The forming the blocking layer, the forming the dielectric layer, and the removing the blocking layer are repeated until the trench is completely filled with the dielectric material.

Bottom-up fill dielectric materials for semiconductor structure fabrication and their methods of fabrication

A method of processing an optical device is provided, including: positioning an optical device on a substrate support in an interior volume of a process chamber, the optical device including an optical device substrate and a plurality of optical device structures formed over the optical device substrate, each optical device structure including a bulk region formed of silicon carbide and one or more surface regions formed of silicon oxycarbide. The method further includes providing one or more process gases to the interior volume of the process chamber, and generating a plasma of the one or more process gases in the interior volume for a first time period when the optical device is on the substrate support, and stopping the plasma after the first time period. A carbon content of the one or more surface regions of each optical device structure is reduced by at least 50% by the plasma.

Optical device improvement

Embodiments of the present disclosure generally relate to densified nanoimprint films and processes for making these densified nanoimprint films, as well as optical devices containing the densified nanoimprint films. In one or more embodiments, a densified nanoimprint film contains a base nanoimprint film and a metal oxide disposed on the base nanoimprint film and in between the nanoparticles. The base nanoimprint film contains nanoparticles, where the nanoparticles contain titanium oxide, zirconium oxide, niobium oxide, tantalum oxide, hafnium oxide, chromium oxide, indium tin oxide, silicon nitride, or any combination thereof. The metal oxide contains aluminum oxide, titanium oxide, zirconium oxide, niobium oxide, tantalum oxide, indium oxide, indium tin oxide, hafnium oxide, chromium oxide, scandium oxide, tin oxide, zinc oxide, yttrium oxide, praseodymium oxide, magnesium oxide, silicon oxide, silicon nitride, silicon oxynitride, or any combination thereof.

Methods for increasing the density of high-index nanoimprint lithography films

Embodiments of the present disclosure generally relate to optical devices. More specifically, embodiments described herein relate to optical devices and methods of manufacturing a patterned optical device film on an optical device substrate. According to certain embodiments, an inkjet deposition process is used to deposit a patterned inkjet coating layer on the optical device substrate. A deposition process may then be used to deposit an optical device material on the patterned inkjet coating and the optical device substrate. The patterned inkjet coating on the optical device substrate may then be washed with an appropriate detergent to lift-off the patterned inkjet coating layer from the optical device substrate to form the patterned optical device film.

Patterning of optical device films via inkjet soluble mask, deposition, and lift-off

An optical device coating assembly is provided. The optical device coating assembly includes a substrate support operable to retain an optical device substrate. The coating assembly further includes a first actuator connected to the substrate support. The first actuator is configured to rotate the substrate support. The coating assembly includes a holder configured to hold a coating applicator against an edge of the optical device substrate when the optical device substrate is rotated on the substrate support and a second actuator operable to apply a force on the holder in a direction towards the substrate support. The second actuator is a constant force actuator.

Edge blackening for optical devices

A method of forming an optical device is provided. The method includes disposing an optical device substrate on a substrate support in a process volume of a process chamber, the optical device substrate having a first surface; and forming a first optical layer on the first surface of the optical device substrate during a first time period when the optical device substrate is on the substrate support, wherein the first optical layer comprises one or more metals in a metal-containing oxide, a metal-containing nitride, or a metal-containing oxynitride, and the first optical layer is formed without an RF-generated plasma over the optical device substrate; and forming a second optical layer with an RF-generated plasma over the first optical layer during a second time period when the optical device substrate is on the substrate support.

Interfacial layer for optical film performance

The present disclosure generally relates to a method and apparatus for forming a substrate having a graduated refractive index. A method of forming a waveguide structure includes expelling plasma from an applicator having a head toward a plurality of grating structures formed on a substrate. The plasma is formed in the head at atmospheric pressure. The method further includes changing a depth of the plurality of grating structures with the plasma by removing grating material from the plurality of grating structures.

Optical device having structural and refractive index gradation, and method of fabricating the same

Contact over active gate structures with metal oxide cap structures are described. In an example, an integrated circuit structure includes a plurality of gate structures above substrate, each of the gate structures including a gate insulating layer thereon. A plurality of conductive trench contact structures is alternating with the plurality of gate structures, each of the conductive trench contact structures including a metal oxide cap structure thereon. An interlayer dielectric material is over the plurality of gate structures and over the plurality of conductive trench contact structures. An opening is in the interlayer dielectric material and in a gate insulating layer of a corresponding one of the plurality of gate structures. A conductive via is in the opening, the conductive via in direct contact with the corresponding one of the plurality of gate structures, and the conductive via on a portion of one or more of the metal oxide cap structures.

Contact over active gate structures with metal oxide-caped contacts to inhibit shorting

Contact over active gate structure with metal oxide layers are described are described. In an example, an integrated circuit structure includes a plurality of gate structures above substrate, each of the gate structures including a gate insulating layer thereon. A plurality of conductive trench contact structures is alternating with the plurality of gate structures. A portion of one of the plurality of trench contact structures has a metal oxide layer thereon. An interlayer dielectric material is over the plurality of gate structures and over the plurality of conductive trench contact structures. An opening is in the interlayer dielectric material and in a gate insulating layer of a corresponding one of the plurality of gate structures. A conductive via is in the opening, the conductive via in direct contact with the corresponding one of the plurality of gate structures, and the conductive via on the metal oxide layer.

Contact over active gate structures with metal oxide layers to inhibit shorting

Embodiments of the present disclosure generally relate to methods and materials for optical device fabrication. More specifically, embodiments described herein provide for optical film deposition methods and materials to expand the process window for amorphous optical film deposition via incorporation of dopant atoms by suppressing the crystal growth of optical materials during deposition. By enabling amorphous films to be deposited at higher temperatures, significant cost savings and increased throughput are possible.

Doped amorphous optical device films and deposition via incorporation of dopant atoms

Embodiments of the present disclosure generally relate to imprint compositions and materials and related processes useful for nanoimprint lithography (NIL). In one or more embodiments, an imprint composition contains one or more types of nanoparticles, one or more surface ligands, one or more solvents, one or more additives, and one or more acrylates.

High refractive index imprint compositions and materials and processes for making the same

Growing community of inventors

Portland, OR, United States of America

Rami Hourani