IDiyas

For the Inventor, By the Inventor

Portland, OR, United States of America

Szuya S Liao

USPTO Granted Patents = 50 

Average Co-Inventor Count = 4.3

ph-index = 4

Forward Citations = 82(Granted Patents)

Forward Citations (Not Self Cited) = 68(Oct 12, 2025)


Location History:

  • Hillsboro, OR (US) (2017 - 2023)
  • Portland, OR (US) (2019 - 2024)

Company Filing History:

goldMedal49 out of 54,664 
 
Intel Corporation
 patents
silverMedal1 out of 9 
 
Daedalus Prime LLC
 patents

Years Active: 2017-2025

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50 patents (USPTO):Explore Patents
1. 12426299 - Fin shaping and integrated circuit structures resulting therefrom (2025-09-23),
2. 12272688 - Selective growth self-aligned gate endcap (SAGE) architectures without fin end gap (2025-04-08),
3. 12266536 - Mid-processing removal of semiconductor fins during fabrication of integrated circuit structures (2025-04-01),
4. 12224326 - Contact architecture for capacitance reduction and satisfactory contact resistance (2025-02-11),
5. 12094955 - Confined epitaxial regions for semiconductor devices (2024-09-17),
6. 12027417 - Source or drain structures with high germanium concentration capping layer (2024-07-02),
7. 11984506 - Field effect transistor having a gate dielectric with a dipole layer and having a gate stressor layer (2024-05-14),
8. 11908940 - Field effect transistor with a hybrid gate spacer including a low-k dielectric material (2024-02-20),
9. 11901457 - Fin shaping and integrated circuit structures resulting therefrom (2024-02-13),
10. 11887860 - Mid-processing removal of semiconductor fins during fabrication of integrated circuit structures (2024-01-30),
11. 11869889 - Self-aligned gate endcap (SAGE) architectures without fin end gap (2024-01-09),
12. 11854894 - Integrated circuit device structures and double-sided electrical testing (2023-12-26),
13. 11824097 - Contact architecture for capacitance reduction and satisfactory contact resistance (2023-11-21),
14. 11688792 - Dual self-aligned gate endcap (SAGE) architectures (2023-06-27),
15. 11640988 - Confined epitaxial regions for semiconductor devices and methods of fabricating semiconductor devices having confined epitaxial regions (2023-05-02),

Title: Inventor Szuya S Liao - Pioneering Innovations in Portland

Introduction: Szuya S Liao is a distinguished inventor based in Portland, Oregon, known for his groundbreaking contributions to various fields of technology and science.

Latest Patents: Szuya S Liao holds several patents in the areas of renewable energy, sustainable materials, and advanced robotics, showcasing his commitment to creating a more sustainable future.

Career Highlights: With a career spanning over two decades, Szuya S Liao has worked with leading research institutions and universities to develop cutting-edge technologies that have revolutionized industries worldwide.

Collaborations: Throughout his career, Szuya S Liao has collaborated with top companies, innovative startups, and brilliant minds in the field, fostering a culture of creativity and innovation.

Conclusion: Szuya S Liao's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and shape the future of technology.

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