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Portland, OR, United States of America

Szuya S Liao

USPTO Granted Patents = 50 (Patent Applications = 14)

Average Co-Inventor Count = 4.3

ph-index = 4

Forward Citations = 82(Granted Patents)

Forward Citations (Not Self Cited) = 68(Dec 10, 2025)

Location History:

Hillsboro, OR (US) (2017 - 2023)
Portland, OR (US) (2019 - 2024)

Company Filing History:

49 out of 54,780

Intel Corporation

Daedalus Prime LLC

Years Active: 2017-2025

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Areas of Expertise:

Integrated Circuit Structures

Self-Aligned Gate Endcap

Field Effect Transistor

Semiconductor Devices

Epitaxial Regions

Nanowire Transistor

Capacitance Reduction

Selective Gate Spacers

Hybrid Gate Spacer

Doping Fin Structures

Memory Arrays

Channel Region Strain

50 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12426299 - Fin shaping and integrated circuit structures resulting therefrom (2025-09-23),

2. 12272688 - Selective growth self-aligned gate endcap (SAGE) architectures without fin end gap (2025-04-08),

3. 12266536 - Mid-processing removal of semiconductor fins during fabrication of integrated circuit structures (2025-04-01),

4. 12224326 - Contact architecture for capacitance reduction and satisfactory contact resistance (2025-02-11),

5. 12094955 - Confined epitaxial regions for semiconductor devices (2024-09-17),

6. 12027417 - Source or drain structures with high germanium concentration capping layer (2024-07-02),

7. 11984506 - Field effect transistor having a gate dielectric with a dipole layer and having a gate stressor layer (2024-05-14),

8. 11908940 - Field effect transistor with a hybrid gate spacer including a low-k dielectric material (2024-02-20),

9. 11901457 - Fin shaping and integrated circuit structures resulting therefrom (2024-02-13),

10. 11887860 - Mid-processing removal of semiconductor fins during fabrication of integrated circuit structures (2024-01-30),

11. 11869889 - Self-aligned gate endcap (SAGE) architectures without fin end gap (2024-01-09),

12. 11854894 - Integrated circuit device structures and double-sided electrical testing (2023-12-26),

13. 11824097 - Contact architecture for capacitance reduction and satisfactory contact resistance (2023-11-21),

14. 11688792 - Dual self-aligned gate endcap (SAGE) architectures (2023-06-27),

15. 11640988 - Confined epitaxial regions for semiconductor devices and methods of fabricating semiconductor devices having confined epitaxial regions (2023-05-02),

Title: Inventor Szuya S Liao - Pioneering Innovations in Portland

Introduction: Szuya S Liao is a distinguished inventor based in Portland, Oregon, known for his groundbreaking contributions to various fields of technology and science.

Latest Patents: Szuya S Liao holds several patents in the areas of renewable energy, sustainable materials, and advanced robotics, showcasing his commitment to creating a more sustainable future.

Career Highlights: With a career spanning over two decades, Szuya S Liao has worked with leading research institutions and universities to develop cutting-edge technologies that have revolutionized industries worldwide.

Collaborations: Throughout his career, Szuya S Liao has collaborated with top companies, innovative startups, and brilliant minds in the field, fostering a culture of creativity and innovation.

Conclusion: Szuya S Liao's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and shape the future of technology.

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