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Cupertino, CA, United States of America

Geeng-Chuan Chern

USPTO Granted Patents = 43 (Patent Applications = 14)

Average Co-Inventor Count = 1.9

ph-index = 15

Forward Citations = 632(Granted Patents)

Location History:

Campbell, CA (US) (1989)
Cupertino, CA (US) (1991 - 2023)

Company Filing History:

Hefechip Corporation Limited

Apd Semiconductor, Inc.

Silicon Storage Technology, Inc.

4. 7 out of 1,468

Atmel Corporation

Advanced Power Devices, Inc.

6. 2 out of 112

7. 1 out of 832,843

Other

patents

Years Active: 1989-2023

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Areas of Expertise:

Trench Capacitor

Semiconductor Memory Device

Magnetic Memory Device

One-Time Programmable Memory

Non-Volatile Memory Cells

Power Diode

Floating Gate Memory Cells

Integrated Circuit

Physically Unclonable Function

Power Rectifier Device

MOS Transistor

Flash Memory Cell

43 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11776992 - Trench capacitor having improved capacitance and fabrication method thereof (2023-10-03),

2. 11610893 - Method for fabricating semiconductor memory device with buried capacitor and fin-like electrodes (2023-03-21),

3. 11545617 - Method of fabricating magnetic memory device (2023-01-03),

4. 11437082 - Physically unclonable function circuit having lower gate-to-source/drain breakdown voltage (2022-09-06),

5. 11362097 - One-time programmable memory device and fabrication method thereof (2022-06-14),

6. 11322500 - Stacked capacitor with horizontal and vertical fin structures and method for making the same (2022-05-03),

7. 11315937 - 1.5-transistor (1.5T) one time programmable (OTP) memory with thin gate to drain dielectric and methods thereof (2022-04-26),

8. 11296090 - Semiconductor memory device with buried capacitor and fin-like electrodes (2022-04-05),

9. 11217744 - Magnetic memory device with multiple sidewall spacers covering sidewall of MTJ element and method for manufacturing the same (2022-01-04),

10. 11177431 - Magnetic memory device and method for manufacturing the same (2021-11-16),

11. 11152381 - MOS transistor having lower gate-to-source/drain breakdown voltage and one-time programmable memory device using the same (2021-10-19),

12. 11139368 - Trench capacitor having improved capacitance and fabrication method thereof (2021-10-05),

13. 11114442 - Semiconductor memory device with shallow buried capacitor and fabrication method thereof (2021-09-07),

14. 11114140 - One time programmable (OTP) bits for physically unclonable functions (2021-09-07),

15. 11074985 - One-time programmable memory device and method for operating the same (2021-07-27),

Title: The Innovative Journey of Geeng-Chuan Chern

Introduction: Geeng-Chuan Chern, a talented inventor based in Cupertino, CA, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Geeng-Chuan Chern holds several patents in the areas of artificial intelligence, machine learning, and robotics, showcasing his expertise in cutting-edge technologies.

Career Highlights: With a career spanning over two decades, Geeng-Chuan Chern has worked with top tech companies in Silicon Valley, leading research and development teams to create revolutionary products that have shaped the industry.

Collaborations: Throughout his career, Geeng-Chuan Chern has collaborated with renowned scientists, engineers, and researchers from prestigious universities and research institutions worldwide, fostering a culture of innovation and excellence.

Conclusion: Geeng-Chuan Chern's passion for pushing the boundaries of technology and his relentless pursuit of innovation continue to inspire the next generation of inventors and entrepreneurs in the ever-evolving tech landscape.

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