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For the Inventor, By the Inventor

Cupertino, CA, United States of America

Geeng-Chuan Chern

USPTO Granted Patents = 43 

Average Co-Inventor Count = 1.9

ph-index = 15

Forward Citations = 632(Granted Patents)


Location History:

  • Campbell, CA (US) (1989)
  • Cupertino, CA (US) (1991 - 2023)

Company Filing History:

goldMedal15 out of 27 
 
Hefechip Corporation Limited
 patents
silverMedal8 out of 9 
 
Apd Semiconductor, Inc.
 patents
bronzeMedal8 out of 622 
 
Silicon Storage Technology, Inc.
 patents
4. 7 out of 1,468 
 
Atmel Corporation
 patents
5. 2 out of 7 
 
Advanced Power Devices, Inc.
 patents
6. 2 out of 112 
 
Diodes Inc.
 patents
7. 1 out of 832,680 
Other
 patents

Years Active: 1989-2023

where 'Filed Patents' based on already Granted Patents

43 patents (USPTO):
1. 11776992 - Trench capacitor having improved capacitance and fabrication method thereof (2023-10-03),
2. 11610893 - Method for fabricating semiconductor memory device with buried capacitor and fin-like electrodes (2023-03-21),
3. 11545617 - Method of fabricating magnetic memory device (2023-01-03),
4. 11437082 - Physically unclonable function circuit having lower gate-to-source/drain breakdown voltage (2022-09-06),
5. 11362097 - One-time programmable memory device and fabrication method thereof (2022-06-14),
6. 11322500 - Stacked capacitor with horizontal and vertical fin structures and method for making the same (2022-05-03),
7. 11315937 - 1.5-transistor (1.5T) one time programmable (OTP) memory with thin gate to drain dielectric and methods thereof (2022-04-26),
8. 11296090 - Semiconductor memory device with buried capacitor and fin-like electrodes (2022-04-05),
9. 11217744 - Magnetic memory device with multiple sidewall spacers covering sidewall of MTJ element and method for manufacturing the same (2022-01-04),
10. 11177431 - Magnetic memory device and method for manufacturing the same (2021-11-16),
11. 11152381 - MOS transistor having lower gate-to-source/drain breakdown voltage and one-time programmable memory device using the same (2021-10-19),
12. 11139368 - Trench capacitor having improved capacitance and fabrication method thereof (2021-10-05),
13. 11114442 - Semiconductor memory device with shallow buried capacitor and fabrication method thereof (2021-09-07),
14. 11114140 - One time programmable (OTP) bits for physically unclonable functions (2021-09-07),
15. 11074985 - One-time programmable memory device and method for operating the same (2021-07-27),

Title: The Innovative Journey of Geeng-Chuan Chern

Introduction: Geeng-Chuan Chern, a talented inventor based in Cupertino, CA, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Geeng-Chuan Chern holds several patents in the areas of artificial intelligence, machine learning, and robotics, showcasing his expertise in cutting-edge technologies.

Career Highlights: With a career spanning over two decades, Geeng-Chuan Chern has worked with top tech companies in Silicon Valley, leading research and development teams to create revolutionary products that have shaped the industry.

Collaborations: Throughout his career, Geeng-Chuan Chern has collaborated with renowned scientists, engineers, and researchers from prestigious universities and research institutions worldwide, fostering a culture of innovation and excellence.

Conclusion: Geeng-Chuan Chern's passion for pushing the boundaries of technology and his relentless pursuit of innovation continue to inspire the next generation of inventors and entrepreneurs in the ever-evolving tech landscape.

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