The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2022
Filed:
Dec. 10, 2019
Hefechip Corporation Limited, Sai Ying Pun, HK;
Geeng-Chuan Chern, Cupertino, CA (US);
HeFeChip Corporation Limited, Sai Ying Pun, HK;
Abstract
A magnetic memory device includes an MTJ element between a bottom electrode layer and a top electrode layer. The MTJ element comprises a reference layer, a tunnel barrier layer and a free layer. The reference layer comprises sub-layers that protrude beyond a sidewall of the tunnel barrier layer. The tunnel barrier layer protrudes beyond a sidewall of one of sub-layers of the free layer. Sidewall spacers are disposed to respectively cover a sidewall of the top electrode layer, sidewalls of the sub-layers of the free layer, a sidewall of the tunnel barrier layer, and sidewalls of the sub-layers of the reference layer. The etching of the MTJ stack and the formation of the sidewall spacers are carried out in the same HDPCVD chamber without breaking the vacuum.