For the Inventor, By the Inventor

Enter assignee name

Hong Kong, China

Hefechip Corporation Limited

USPTO Granted Patents = 27

Forward Citations = 14

Loading Chart...

Loading Chart...

26 inventors (with patents filed for the assignee):

Geeng-Chuan Chern (15 out of 43 patents)

Qinli Ma (6 out of 6 patents)

Shu-Jen Han (6 out of 6 patents)

4. Liang-Choo Hsia (6 out of 11 patents)

5. Yanzun Li (4 out of 4 patents)

6. Huang Liu (4 out of 86 patents)

7. Youngsuk Choi (4 out of 4 patents)

8. Wei-Chuan Chen (4 out of 49 patents)

9. John H Zhang (4 out of 218 patents)

10. Devendra K Sadana (2 out of 829 patents)

11. Hong-Hui Hsu (1 out of 1 patent)

12. Guoliang Zhu (1 out of 4 patents)

13. Tongqing Chen (1 out of 1 patent)

14. Liang Li (1 out of 11 patents)

15. Yingfang Wang (1 out of 2 patents)

27 patents: Sort by Forward Citations

1. 12464699 - Semiconductor structure and forming method thereof (2025-11-04),

2. 12461450 - OPC modeling method (2025-11-04),

3. 12250828 - Semiconductor structure and fabrication method thereof (2025-03-11),

4. 12125873 - Method to form a fin structure on deep trenches for a semiconductor device (2024-10-22),

5. 12108684 - Magnetic tunneling junction element with a composite capping layer and magnetoresistive random access memory device using the same (2024-10-01),

6. 11776992 - Trench capacitor having improved capacitance and fabrication method thereof (2023-10-03),

7. 11763972 - Magnetic tunnel junction element with a robust reference layer (2023-09-19),

8. 11610893 - Method for fabricating semiconductor memory device with buried capacitor and fin-like electrodes (2023-03-21),

9. 11545617 - Method of fabricating magnetic memory device (2023-01-03),

10. 11538986 - Asymmetric engineered storage layer of magnetic tunnel junction element for magnetic memory device (2022-12-27),

11. 11456411 - Method for fabricating magnetic tunneling junction element with a composite capping layer (2022-09-27),

12. 11437082 - Physically unclonable function circuit having lower gate-to-source/drain breakdown voltage (2022-09-06),

13. 11362097 - One-time programmable memory device and fabrication method thereof (2022-06-14),

14. 11342496 - Semiconductor memory structure with magnetic tunneling junction stack and method for forming the same (2022-05-24),

15. 11322500 - Stacked capacitor with horizontal and vertical fin structures and method for making the same (2022-05-03),

HeFeChip Corporation Limited is a leading semiconductor company specializing in the design and manufacture of integrated circuits. With a strong focus on innovation and quality, HeFeChip offers a wide range of solutions for various industries including consumer electronics, automotive, telecommunications, and more. Our mission is to empower our customers with cutting-edge technology and reliable products that enhance their competitiveness in the market.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 30 2025

27 Patents

#120 in Hong Kong

#1,002 in China

#23,293 in the World

Hong Kong, China

Hefechip Corporation Limited

Forward Citations = 14

26 inventors:

Geeng-Chuan Chern (15 out of 43 patents)

Qinli Ma (6 out of 6 patents)

Shu-Jen Han (6 out of 6 patents)

4. Liang-Choo Hsia (6 out of 11 patents)

5. Yanzun Li (4 out of 4 patents)

Please report any incorrect information to support@idiyas.com

Loading…