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Hong Kong, China

Hefechip Corporation Limited

USPTO Granted Patents = 29

Forward Citations = 23

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32 inventors (with patents filed for the assignee):

Geeng-Chuan Chern (15 out of 43 patents)

Qinli Ma (6 out of 6 patents)

Shu-Jen Han (6 out of 6 patents)

4. Liang-Choo Hsia (6 out of 11 patents)

5. Wei-Chuan Chen (6 out of 51 patents)

6. Yanzun Li (4 out of 4 patents)

7. Huang Liu (4 out of 87 patents)

8. Youngsuk Choi (4 out of 4 patents)

9. John H Zhang (4 out of 219 patents)

10. Hong-Hui Hsu (2 out of 4 patents)

11. Devendra K Sadana (2 out of 832 patents)

12. Yiheng Xu (2 out of 2 patents)

13. Hong-Hui Hsu (1 out of 1 patent)

14. Guoliang Zhu (1 out of 4 patents)

15. Tongqing Chen (1 out of 1 patent)

29 patents: Sort by Forward Citations

1. 12568768 - Methods for fabricating magnetoresistive random access memory with via under MJT (2026-03-03),

2. 12557554 - Methods for fabricating MRAM with void free interlayer dielectric (2026-02-17),

3. 12464699 - Semiconductor structure and forming method thereof (2025-11-04),

4. 12461450 - OPC modeling method (2025-11-04),

5. 12250828 - Semiconductor structure and fabrication method thereof (2025-03-11),

6. 12125873 - Method to form a fin structure on deep trenches for a semiconductor device (2024-10-22),

7. 12108684 - Magnetic tunneling junction element with a composite capping layer and magnetoresistive random access memory device using the same (2024-10-01),

8. 11776992 - Trench capacitor having improved capacitance and fabrication method thereof (2023-10-03),

9. 11763972 - Magnetic tunnel junction element with a robust reference layer (2023-09-19),

10. 11610893 - Method for fabricating semiconductor memory device with buried capacitor and fin-like electrodes (2023-03-21),

11. 11545617 - Method of fabricating magnetic memory device (2023-01-03),

12. 11538986 - Asymmetric engineered storage layer of magnetic tunnel junction element for magnetic memory device (2022-12-27),

13. 11456411 - Method for fabricating magnetic tunneling junction element with a composite capping layer (2022-09-27),

14. 11437082 - Physically unclonable function circuit having lower gate-to-source/drain breakdown voltage (2022-09-06),

15. 11362097 - One-time programmable memory device and fabrication method thereof (2022-06-14),

HeFeChip Corporation Limited is a leading semiconductor company specializing in the design and manufacture of integrated circuits. With a strong focus on innovation and quality, HeFeChip offers a wide range of solutions for various industries including consumer electronics, automotive, telecommunications, and more. Our mission is to empower our customers with cutting-edge technology and reliable products that enhance their competitiveness in the market.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Sep 15 2026

29 Patents

#119 in Hong Kong

#1,042 in China

#22,481 in the World

Hong Kong, China

Hefechip Corporation Limited

Forward Citations = 23

32 inventors:

Geeng-Chuan Chern (15 out of 43 patents)

Qinli Ma (6 out of 6 patents)

Shu-Jen Han (6 out of 6 patents)

4. Liang-Choo Hsia (6 out of 11 patents)

5. Wei-Chuan Chen (6 out of 51 patents)

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