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Hong Kong, China

Hefechip Corporation Limited

USPTO Granted Patents = 29

Forward Citations = 23

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32 inventors (with patents filed for the assignee):

Geeng-Chuan Chern (15 out of 43 patents)

Qinli Ma (6 out of 6 patents)

Shu-Jen Han (6 out of 6 patents)

4. Liang-Choo Hsia (6 out of 11 patents)

5. Wei-Chuan Chen (6 out of 51 patents)

6. Yanzun Li (4 out of 4 patents)

7. Huang Liu (4 out of 87 patents)

8. Youngsuk Choi (4 out of 4 patents)

9. John H Zhang (4 out of 219 patents)

10. Hong-Hui Hsu (2 out of 4 patents)

11. Devendra K Sadana (2 out of 832 patents)

12. Yiheng Xu (2 out of 2 patents)

13. Hong-Hui Hsu (1 out of 1 patent)

14. Guoliang Zhu (1 out of 4 patents)

15. Tongqing Chen (1 out of 1 patent)

Core Competencies:

Magnetoresistive Random Access Memory

Magnetic Tunnel Junction

Semiconductor Fabrication

Void Free Interlayer Dielectric

Trench Capacitor

Fin Structures

One-Time Programmable Memory

Physically Unclonable Function

Composite Capping Layer

Buried Capacitor

Asymmetric Engineered Storage Layer

Semiconductor Memory Structure

29 patents: Sort by Forward Citations

1. 12568768 - Methods for fabricating magnetoresistive random access memory with via under MJT (2026-03-03),

2. 12557554 - Methods for fabricating MRAM with void free interlayer dielectric (2026-02-17),

3. 12464699 - Semiconductor structure and forming method thereof (2025-11-04),

4. 12461450 - OPC modeling method (2025-11-04),

5. 12250828 - Semiconductor structure and fabrication method thereof (2025-03-11),

6. 12125873 - Method to form a fin structure on deep trenches for a semiconductor device (2024-10-22),

7. 12108684 - Magnetic tunneling junction element with a composite capping layer and magnetoresistive random access memory device using the same (2024-10-01),

8. 11776992 - Trench capacitor having improved capacitance and fabrication method thereof (2023-10-03),

9. 11763972 - Magnetic tunnel junction element with a robust reference layer (2023-09-19),

10. 11610893 - Method for fabricating semiconductor memory device with buried capacitor and fin-like electrodes (2023-03-21),

11. 11545617 - Method of fabricating magnetic memory device (2023-01-03),

12. 11538986 - Asymmetric engineered storage layer of magnetic tunnel junction element for magnetic memory device (2022-12-27),

13. 11456411 - Method for fabricating magnetic tunneling junction element with a composite capping layer (2022-09-27),

14. 11437082 - Physically unclonable function circuit having lower gate-to-source/drain breakdown voltage (2022-09-06),

15. 11362097 - One-time programmable memory device and fabrication method thereof (2022-06-14),

Company Overview

Hefechip Corporation Limited is a Hong Kong-based company specializing in advanced semiconductor technologies and integrated circuit design. The organization focuses on developing innovative solutions for various applications, including consumer electronics, telecommunications, and automotive sectors. With a commitment to research and development, Hefechip aims to enhance performance and efficiency in electronic devices, contributing to the evolution of smart technologies and the Internet of Things (IoT).

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 6 2026

29 Patents

#119 in Hong Kong

#1,046 in China

#22,530 in the World

Hong Kong, China

Hefechip Corporation Limited

Forward Citations = 23

32 inventors:

Geeng-Chuan Chern (15 out of 43 patents)

Qinli Ma (6 out of 6 patents)

Shu-Jen Han (6 out of 6 patents)

4. Liang-Choo Hsia (6 out of 11 patents)

5. Wei-Chuan Chen (6 out of 51 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Hefechip Corporation Limited. Retrieved from https://idiyas.com/company/hefechip

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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