The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2024
Filed:
May. 09, 2021
Applicant:
Hefechip Corporation Limited, Sai Ying Pun, HK;
Inventors:
Qinli Ma, Mt Kisco, NY (US);
Wei-Chuan Chen, Scarsdale, NY (US);
Youngsuk Choi, Niskayuna, NY (US);
Shu-Jen Han, Armonk, NY (US);
Assignee:
HEFECHIP CORPORATION LIMITED, Sai Ying Pun, HK;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10N 50/80 (2023.01); G11C 11/16 (2006.01); H01F 10/32 (2006.01); H10B 61/00 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); G11C 11/161 (2013.01); H01F 10/3254 (2013.01); H01F 10/329 (2013.01); H10B 61/22 (2023.02); H10N 50/85 (2023.02); H01F 10/3286 (2013.01);
Abstract
A magnetic tunneling junction (MTJ) element includes a reference layer, a tunnel barrier layer on the reference layer, a free layer on the tunnel barrier layer, and a composite capping layer on the free layer. The composite capping layer comprises a diffusion-stop layer on the free layer, a light-element sink layer on the diffusion-stop layer, and an amorphous layer on the light-element sink layer.