The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
Dec. 07, 2022
Hefechip Corporation Limited, Hong Kong, CN;
Yinuo Pan, Zhejiang, CN;
Yingfang Wang, Shanghai, CN;
Keeho Kim, Hartford, CT (US);
Norman S. Chen, Ballston Spa, NY (US);
Eric S. Parent, Ballston Spa, NY (US);
HEFECHIP CORPORATION LIMITED, Hong Kong, CN;
Abstract
An OPC modeling method is disclosed, which includes: step S: determining optical model parameters and resist model parameters; step S: obtaining a plurality of parameter combinations by stochastically choosing values for the parameters; step S: performing photolithography simulations and etching wafers and calculating RMS values of differences between simulated CDs and etching CDs and BCE values of the CDs; step S: evaluating the values according to Pareto principle and calculating Pareto optimum to N-th-best Pareto suboptimum sets to prioritize the plurality of parameter combinations in a descending order; step S: applying a genetic algorithm with position-based crossover and/or mutation to the plurality of parameter combinations, to obtain new parameter combinations; and step S: iterating steps Sto Son the new parameter combinations until a number of iterations reaches a first predetermined value and using highest prioritized ones of parameter combinations resulting from a last iteration for OPC modeling.