Hartford, CT, United States of America

Keeho Kim

This inventor holds 1 USPTO granted patent. Top assignee: Hefechip Corporation Limited. Active years: 2025.


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Keeho Kim: Innovator in OPC Modeling Methods

Introduction

Keeho Kim is a notable inventor based in Hartford, CT (US). He has made significant contributions to the field of optical modeling, particularly through his innovative patent related to OPC modeling methods. His work is essential for advancements in photolithography and semiconductor manufacturing.

Latest Patents

Keeho Kim holds a patent for an OPC modeling method. This method includes several steps: determining optical model parameters and resist model parameters, obtaining a plurality of parameter combinations by stochastically choosing values for the parameters, performing photolithography simulations and etching wafers, and calculating RMS values of differences between simulated critical dimensions (CDs) and etching CDs. Additionally, it involves evaluating the values according to the Pareto principle and applying a genetic algorithm to optimize parameter combinations. This innovative approach enhances the efficiency and accuracy of OPC modeling.

Career Highlights

Keeho Kim is currently employed at Hefechip Corporation Limited, where he continues to develop and refine his innovative methodologies. His expertise in optical modeling has positioned him as a valuable asset in the semiconductor industry.

Collaborations

Keeho collaborates with talented individuals such as Yingfang Wang and Yinuo Pan. Their combined efforts contribute to the advancement of technologies in their field.

Conclusion

Keeho Kim's contributions to OPC modeling methods demonstrate his commitment to innovation in the semiconductor industry. His work not only enhances photolithography processes but also sets a foundation for future advancements in optical modeling.

Profile summary based on public USPTO records.
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