The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
Dec. 27, 2022
Hefechip Corporation Limited, Hong Kong, CN;
Liang Li, Singapore, SG;
Chunyu Wong, Clifton Park, NY (US);
John H Zhang, Altamont, NY (US);
Yanzun Li, Lagrangeville, NY (US);
Huang Liu, Mechanicville, NY (US);
Yuan Lung Lin, Zhubei, TW;
Haijiang Yuan, Shanghai, CN;
Chung-Chiang Lin, Qonglin, TW;
HEFECHIP CORPORATION LIMITED, Hong Kong, CN;
Abstract
A semiconductor structure and a method of forming it are disclosed by the present application. Deep trench capacitors are formed in a substrate, and fin contacts formed by upper portions of inner electrodes in the deep trench capacitors are connected to fins on a surface of the substrate. At least one of word lines formed on the substrate pass over and are separated by a word line isolation layer from the inner electrodes. The word line isolation layer covers portions of the inner electrodes between a buried oxide layer and the fin contacts, while the fins are exposed therefrom.