Yuan Lung Lin

Title: Innovations of Yuan Lung Lin in Semiconductor Technology

Introduction

Yuan Lung Lin is a prominent inventor based in Zhubei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent. His work focuses on enhancing the efficiency and functionality of semiconductor structures.

Latest Patents

Yuan Lung Lin holds a patent for a semiconductor structure and the method of forming it. This patent describes a semiconductor structure that includes deep trench capacitors formed in a substrate. The invention also details how fin contacts, created by the upper portions of inner electrodes in the deep trench capacitors, connect to fins on the surface of the substrate. Additionally, the patent outlines that at least one of the word lines formed on the substrate passes over and is separated by a word line isolation layer from the inner electrodes. The word line isolation layer covers portions of the inner electrodes between a buried oxide layer and the fin contacts, while the fins remain exposed.

Career Highlights

Yuan Lung Lin is associated with Hefechip Corporation Limited, where he continues to develop and refine semiconductor technologies. His expertise in this area has led to advancements that benefit the industry and enhance the performance of electronic devices.

Collaborations

Yuan Lung Lin collaborates with talented individuals such as Liang Li and Chunyu Wong. Their combined efforts contribute to the innovative projects at Hefechip Corporation Limited.

Conclusion

Yuan Lung Lin's contributions to semiconductor technology through his patent demonstrate his commitment to innovation in the field. His work not only advances technology but also sets a foundation for future developments in semiconductor structures.