The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2021
Filed:
Dec. 12, 2019
Hefechip Corporation Limited, Sai Ying Pun, HK;
Geeng-Chuan Chern, Cupertino, CA (US);
Liang-Choo Hsia, Hsinchu, TW;
HeFeChip Corporation Limited, Sai Ying Pun, HK;
Abstract
A semiconductor device includes a bottle-shaped capacitor cavity extends through a silicon device layer and a buried oxide layer of a substrate. The bottle-shaped capacitor cavity includes an upper portion in the silicon device layer and a widened bottom burrow in the buried oxide layer and underneath the silicon device layer. The widened bottom burrow is wider than the upper portion. A buried capacitor is disposed in the bottle-shaped capacitor cavity. The buried capacitor includes an inner electrode and an outer electrode with the capacitor dielectric layer therebetween. A transistor is disposed on the substrate. The transistor includes a source region and a drain region, a channel region between the source region and the drain region, and a gate over the channel region. The source region is electrically connected to the inner electrode.