The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2022
Filed:
Dec. 12, 2019
Applicant:
Hefechip Corporation Limited, Sai Ying Pun, HK;
Inventors:
Geeng-Chuan Chern, Cupertino, CA (US);
Liang-Choo Hsia, Hsinchu, TW;
Assignee:
HeFeChip Corporation Limited, Sai Ying Pun, HK;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); G11C 11/401 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10832 (2013.01); G11C 11/401 (2013.01); H01L 27/10861 (2013.01);
Abstract
A semiconductor device includes a substrate having a semiconductor substrate, an insulator layer on the semiconductor substrate, and a silicon device layer on the insulator layer. At least one capacitor cavity with corrugated sidewall surface is disposed within the insulator layer between the semiconductor substrate and the silicon device layer. At least one buried capacitor is provided in the at least one capacitor cavity. The at least one buried capacitor includes an inner electrode and an outer electrode with a capacitor dielectric layer therebetween.