The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2022

Filed:

Aug. 19, 2020
Applicant:

Hefechip Corporation Limited, Hong Kong, HK;

Inventor:

Geeng-Chuan Chern, Cupertino, CA (US);

Assignee:

HeFeChip Corporation Limited, Sai Ying Pun, HK;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); H01L 27/112 (2006.01); H01L 29/423 (2006.01); H01L 29/40 (2006.01); G11C 17/18 (2006.01); G11C 17/16 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11206 (2013.01); G11C 17/16 (2013.01); G11C 17/18 (2013.01); H01L 29/401 (2013.01); H01L 29/42368 (2013.01);
Abstract

A semiconductor device and methods thereof are disclosed. The proposed semiconductor device includes at least a unit cell wherein the unit cell includes a select transistor, and half of a ground-gate transistor electrically connected to the select transistor, and including a central conductive gate electrode region, two side conductive spacer regions and a gate dielectric layer, wherein a first and a second thicknesses of the gate dielectric layer underneath the two side conductive spacer regions are thinner than a third thickness of the gate dielectric layer underneath the central conductive gate electrode region.


Find Patent Forward Citations

Loading…