The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2021
Filed:
Oct. 01, 2019
Hefechip Corporation Limited, Sai Ying Pun, HK;
Geeng-Chuan Chern, Cupertino, CA (US);
Liang-Choo Hsia, Hsinchu, TW;
HeFeChip Corporation Limited, Sai Ying Pun, HK;
Abstract
A semiconductor device includes a substrate having at least one trench with corrugated sidewall surface. At least one trench capacitor is located in the at least one trench. The at least one trench capacitor includes inner and outer electrodes with a node dielectric layer therebetween. At least one transistor is provided on the substrate. The at least one transistor comprises a source region and a drain region, a channel region between the source region and the drain region, and a gate over the channel region. The source region is electrically connected to the inner electrode of the at least one trench capacitor.