Hsinchu, Taiwan

Da-Wen Lin

This inventor holds 66 USPTO granted patents and 16 published patent applications, primarily in Semiconductor Devices (CPC class H01L). Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2003-2026.

USPTO Granted Patents = 66 

% Patents Active = 83.3

Average Co-Inventor Count = 4.3

ph-index = 11

Forward Citations = 962(Granted Patents)

Forward Citations (Not Self Cited) = 935(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Taichung, TW (2006)
  • Taipin, TW (2006 - 2008)
  • Taiping, TW (2003 - 2010)
  • Taiwan, TW (2017)
  • Hsin-Chu, TW (2011 - 2024)

Company Filing History:


Years Active: 2003-2026

Loading Chart...
Areas of Expertise:
FinFET
Multi-Gate Device
Leakage Current
Channel Configuration
Semiconductor Structure
Integrated Circuit
Epitaxial Region
Strained Channel
Dislocation Formation
Gate Layers
Thermal Management
Device Fabrication
66 patents (USPTO):Explore Patents

Title: **Da-Wen Lin: A Leading Innovator in Semiconductor Technology**

Introduction

Da-Wen Lin is a distinguished inventor based in Hsinchu, Taiwan, renowned for his significant contributions to the field of semiconductor technology. With an impressive portfolio consisting of 58 patents, Lin has made substantial advancements in the design and manufacturing techniques of semiconductor structures.

Latest Patents

Among his latest innovations are two notable patents:

1. **Semiconductor Structure and Method for Forming the Same** - This patent outlines a method for forming a semiconductor structure that involves creating a semiconductor fin structure composed of alternating first and second semiconductor layers. The process includes laterally recessing the first semiconductor layers to form first notches, applying first passivation layers on the exposed sidewalls, and creating first inner spacer layers within the notches.

2. **Manufacturing Method for Semiconductor Structure Having a Plurality of Fins** - In this patent, Lin presents a method that begins with forming a semiconductor stack with at least one SiGe layer and then uses a first etching operation to create multiple fins from this stack. Each fin consists of a first and a second portion, separated by a SiGe portion. The method further includes the formation of poly gate stripes, recessing, and spacer creation surrounding the SiGe portions.

Career Highlights

Da-Wen Lin is currently employed at Taiwan Semiconductor Manufacturing Company Limited, where he continues to push the boundaries of semiconductor innovation. His work in the company highlights his commitment to enhancing semiconductor manufacturing processes and structures, making him a valuable asset in the industry.

Collaborations

Lin frequently collaborates with esteemed colleagues, including Chun Hsiung Tsai and Chien-Tai Chan. Together, their combined expertise fosters a creative and innovative environment that drives forward the development of cutting-edge semiconductor technologies.

Conclusion

Da-Wen Lin’s contributions to the semiconductor industry are profound and impactful. With a wealth of patents demonstrating his innovative spirit, his work not only exemplifies engineering excellence but also paves the way for future advancements in semiconductor technology. His collaborations and ongoing research at Taiwan Semiconductor Manufacturing Company reflect his dedication to continued innovation in this critical field.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to [email protected]
Loading…