The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2024

Filed:

Jun. 25, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chia-Ming Hsu, Hualien County, TW;

Yi-Jing Li, Hsinchu, TW;

Chih-Hsin Ko, Kaohsiung County, TW;

Kuang-Hsin Chen, Jung-Li, TW;

Da-Wen Lin, Hsinchu, TW;

Clement Hsingjen Wann, Carmel, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); H01L 21/0259 (2013.01); H01L 21/02532 (2013.01); H01L 29/0665 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/66742 (2013.01);
Abstract

Present disclosure provides a semiconductor structure, including a semiconductor fin having a first portion and a second portion over the first portion, a first conductive region abutting a first lateral surface of the first portion and a first lateral surface of the second portion, a metal gate having a bottom portion and an upper portion, the bottom portion being between the first portion and the second portion of the semiconductor fin, and the upper portion being over the second portion of the semiconductor fin, and a first spacer between the bottom portion of the metal gate and the first conductive region. A method for manufacturing the semiconductor structure described herein is also provided.


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