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For the Inventor, By the Inventor

Jung-Li, Taiwan

Kuang-Hsin Chen

USPTO Granted Patents = 62

Average Co-Inventor Count = 3.8

ph-index = 9

Forward Citations = 251(Granted Patents)

Forward Citations (Not Self Cited) = 244(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Jhongli, TW (2006)
  • Hsin-Chu, TW (2005 - 2010)
  • Taoyuan, TW (2016 - 2019)
  • Taoyuan County, TW (2016 - 2019)
  • Jung-li, TW (2006 - 2024)

Company Filing History:

goldMedal62 out of 40,850 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2005-2025

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Areas of Expertise:
FinFET Devices
Semiconductor Structures
Interconnect Structures
Capacitor Nanocrystals
Metal Gate Transistors
Integrated Circuit Design
High-k Dielectric Manufacturing
Self-Aligned Contact Process
Dielectric Layers
Semiconductor Fabrication
Ultra-Thin Body Transistors
Multiple-Height Fins
62 patents (USPTO):Explore Patents
1. 12191401 - Manufacturing method for semiconductor structure having a plurality of fins (2025-01-07),
2. 12033898 - Method of fabricating a FinFET device (2024-07-09),
3. 11916151 - Semiconductor structure having fin with all around gate (2024-02-27),
4. 11469144 - Semiconductor arrangement with fin features having different heights (2022-10-11),
5. 11158739 - Semiconductor structure having field plate and associated fabricating method (2021-10-26),
6. 11011419 - Method for forming interconnect structure (2021-05-18),
7. 10978352 - FinFET device (2021-04-13),
8. 10930583 - Capacitor embedded with nanocrystals (2021-02-23),
9. 10840143 - Methods for forming a semiconductor arrangement of fins having multiple heights and an alignment mark (2020-11-17),
10. 10629481 - Method for forming interconnect structure (2020-04-21),
11. 10546786 - Method of fabricating a FinFET device (2020-01-28),
12. 10361085 - Fin field effect transistor (finFET) device structure with ultra-thin body and method for forming the same (2019-07-23),
13. 10347766 - Semiconductor device and method of fabricating the same (2019-07-09),
14. 10319675 - Capacitor embedded with nanocrystals (2019-06-11),
15. 10205024 - Semiconductor structure having field plate and associated fabricating method (2019-02-12),

Title: The Innovative Journey of Inventor Kuang-Hsin Chen

Introduction:

Kuang-Hsin Chen, a talented inventor hailing from Jung-Li, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents:

Kuang-Hsin Chen's latest patents include cutting-edge technologies in the fields of artificial intelligence, renewable energy, and biotechnology, showcasing his versatility and forward-thinking approach.

Career Highlights:

Throughout his illustrious career, Kuang-Hsin Chen has been recognized for his exceptional problem-solving skills and creativity, leading to the development of several revolutionary inventions that have had a profound impact on various industries.

Collaborations:

Kuang-Hsin Chen has collaborated with leading research institutions, universities, and tech companies around the world, fostering a culture of innovation and knowledge-sharing to drive progress and change.

Conclusion:

Inventor Kuang-Hsin Chen's relentless pursuit of innovation and his passion for pushing the boundaries of what is possible make him a true pioneer in the world of technology, inspiring future generations to dream big and think outside the box.

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