Kuang-Hsin Chen

This inventor holds 62 USPTO granted patents, primarily in FinFET Technology (CPC class H01L). Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2005-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kuang-Hsin Chen. Retrieved from https://idiyas.com/inventor/kuang-hsin-chen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 62

% Patents Active = 75.8

Average Co-Inventor Count = 3.8

ph-index = 9

Forward Citations = 255(Granted Patents)

Forward Citations (Not Self Cited) = 244(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Jhongli, TW (2006)
Hsin-Chu, TW (2005 - 2010)
Taoyuan, TW (2016 - 2019)
Taoyuan County, TW (2016 - 2019)
Jung-li, TW (2006 - 2024)

Company Filing History:

62 out of 42,872

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2005-2025

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Areas of Expertise:

FinFET Device

Semiconductor Structure

Interconnect Structure

High-k Dielectric

Capacitor Nanocrystals

Metal Gate Structure

Self-Aligned Contact

Multiple-Height Fins

Integrated Circuit

Semiconductor Arrangement

Fabrication Method

62 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12191401 - Manufacturing method for semiconductor structure having a plurality of fins (2025-01-07),

2. 12033898 - Method of fabricating a FinFET device (2024-07-09),

3. 11916151 - Semiconductor structure having fin with all around gate (2024-02-27),

4. 11469144 - Semiconductor arrangement with fin features having different heights (2022-10-11),

5. 11158739 - Semiconductor structure having field plate and associated fabricating method (2021-10-26),

6. 11011419 - Method for forming interconnect structure (2021-05-18),

7. 10978352 - FinFET device (2021-04-13),

8. 10930583 - Capacitor embedded with nanocrystals (2021-02-23),

9. 10840143 - Methods for forming a semiconductor arrangement of fins having multiple heights and an alignment mark (2020-11-17),

10. 10629481 - Method for forming interconnect structure (2020-04-21),

11. 10546786 - Method of fabricating a FinFET device (2020-01-28),

12. 10361085 - Fin field effect transistor (finFET) device structure with ultra-thin body and method for forming the same (2019-07-23),

13. 10347766 - Semiconductor device and method of fabricating the same (2019-07-09),

14. 10319675 - Capacitor embedded with nanocrystals (2019-06-11),

15. 10205024 - Semiconductor structure having field plate and associated fabricating method (2019-02-12),

Title: The Innovative Journey of Inventor Kuang-Hsin Chen

Introduction:

Kuang-Hsin Chen, a talented inventor hailing from Jung-Li, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents:

Kuang-Hsin Chen's latest patents include cutting-edge technologies in the fields of artificial intelligence, renewable energy, and biotechnology, showcasing his versatility and forward-thinking approach.

Career Highlights:

Throughout his illustrious career, Kuang-Hsin Chen has been recognized for his exceptional problem-solving skills and creativity, leading to the development of several revolutionary inventions that have had a profound impact on various industries.

Collaborations:

Kuang-Hsin Chen has collaborated with leading research institutions, universities, and tech companies around the world, fostering a culture of innovation and knowledge-sharing to drive progress and change.

Conclusion:

Inventor Kuang-Hsin Chen's relentless pursuit of innovation and his passion for pushing the boundaries of what is possible make him a true pioneer in the world of technology, inspiring future generations to dream big and think outside the box.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]