The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2019
Filed:
Sep. 02, 2014
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Wei-Shuo Ho, New Taipei, TW;
Chia-Ming Chang, Hsinchu, TW;
Tsung-Yu Chiang, New Taipei, TW;
Kuang-Hsin Chen, Taoyuan County, TW;
Bor-Zen Tien, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
Embodiments of the present disclosure relate generally to a semiconductor device and method of fabricating the same, the semiconductor device includes a semiconductor substrate and a gate stack disposed over a channel region of the semiconductor device, the gate stack includes an oxidation layer, a gate dielectric and a gate electrode, the oxidation layer at least covers a portion of the channel region of the semiconductor device and may act as a barrier to prevent damage to the underlying features, such as the source and drain regions, during removal of a dummy gate in a gate last process.