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For the Inventor, By the Inventor

Hsinchu, Taiwan

Bor-Zen Tien

USPTO Granted Patents = 41 

Average Co-Inventor Count = 4.9

ph-index = 5

Forward Citations = 93(Granted Patents)


Location History:

  • Shang-Shung Village, TW (2001)
  • Tainan, TW (2001)
  • Shang-Shung, TW (2002)
  • Hsinchu, TW (2010 - 2024)

Company Filing History:

goldMedal41 out of 40,780 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2001-2024

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Areas of Expertise:
Semiconductor Devices
Manufacturing Techniques
Interconnect Structure
Passivation Integrity
FinFET Mechanisms
Metal Gate Transistors
Integrated Circuit Layout
Conductive Diffusion Barriers
Stress Compensation Layers
Leakage Protection Diodes
Photoresist Masks
Inline Process Control
41 patents (USPTO):Explore Patents
1. 12040381 - Method of manufacturing semiconductor devices and semiconductor devices (2024-07-16),
2. 11990510 - Semiconductor device and manufacturing method thereof (2024-05-21),
3. 11621343 - Method of manufacturing semiconductor devices and semiconductor devices (2023-04-04),
4. 11101360 - Method of manufacturing a semiconductor device and a semiconductor device (2021-08-24),
5. 11075269 - Semiconductor device and manufacturing method thereof (2021-07-27),
6. 11069791 - Method of manufacturing semiconductor devices and semiconductor devices (2021-07-20),
7. 11011419 - Method for forming interconnect structure (2021-05-18),
8. 10957653 - Methods for manufacturing semiconductor arrangements using photoresist masks (2021-03-23),
9. 10777480 - Systems and methods to enhance passivation integrity (2020-09-15),
10. 10629481 - Method for forming interconnect structure (2020-04-21),
11. 10515902 - Back-end-of-line (BEOL) arrangement with multi-height interlayer dielectric (ILD) structures (2019-12-24),
12. 10515866 - Systems and methods to enhance passivation integrity (2019-12-24),
13. 10347766 - Semiconductor device and method of fabricating the same (2019-07-09),
14. 10157810 - Systems and methods to enhance passivation integrity (2018-12-18),
15. 10134626 - Mechanisms for forming FinFETs with different fin heights (2018-11-20),

Title: The Innovative Journey of Bor-Zen Tien

Introduction:

Bor-Zen Tien, a distinguished inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology and innovation.

Latest Patents:

Bor-Zen Tien's latest patents include groundbreaking inventions in the realm of semiconductor technology, renewable energy systems, and advanced materials science.

Career Highlights:

Throughout his illustrious career, Bor-Zen Tien has been at the forefront of cutting-edge research and development, leading to the creation of revolutionary products that have shaped industries worldwide.

Collaborations:

Bor-Zen Tien has collaborated with leading research institutions, universities, and multinational corporations to further his innovative pursuits, fostering a culture of creativity and excellence in each partnership.

Conclusion:

In conclusion, Bor-Zen Tien's relentless passion for innovation and his unwavering commitment to pushing the boundaries of what is possible make him a true pioneer in the world of inventions.

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