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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12796032 B1

PDFFull Text
Date of Patent:
Nov. 10, 2026

Filed:

Apr. 17, 2024

Semiconductor device and manufacturing method thereof

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Cheng-Yi Peng, Taipei City, TW;

Ting Tsai, Hsinchu, TW;

Chung-Wei Hung, Tainan City, TW;

Jung-Ting Chen, Zhubei City, TW;

Ying-Hua Lai, Taipei, TW;

Song-Bor Lee, Zhubei City, TW;

Bor-Zen Tien, Hsinchu City, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

STUDEBAKER BRACKETT PLLC

Primary Examiner:

Mohammad A Rahman

Int. Cl.
CPC ...
H10D 62/13 (2025.01); H10D 30/62 (2025.01); H10D 30/69 (2025.01); H10D 62/80 (2025.01); H10P 14/20 (2026.01); H10P 14/24 (2026.01); H10P 30/20 (2026.01);
U.S. Cl.
CPC ...
H10D 62/151 (2025.01); H10D 62/80 (2025.01); H10D 30/62 (2025.01); H10D 30/797 (2025.01); H10P 14/24 (2026.01); H10P 14/3402 (2026.01); H10P 14/3408 (2026.01); H10P 30/204 (2026.01); H10P 30/21 (2026.01);
Abstract

A semiconductor device, includes a channel region, and a source/drain region adjacent to the channel region. The source/drain region includes a first epitaxial layer, a second epitaxial layer epitaxially formed on the first epitaxial layer and a third epitaxial layer epitaxially formed on the second epitaxial layer, and the first epitaxial layer is made of SiAs.

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Quick Actions:

Peng, Cheng-Yi. (2026). Semiconductor device and manufacturing method thereof (U.S. Patent No. 12796032). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12796032

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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