The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2021

Filed:

Mar. 26, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Bor-Zen Tien, Hsinchu, TW;

Jhu-Ming Song, Nantou, TW;

Hsuan-Han Lin, Kaohsiung, TW;

Kuang-Hsin Chen, Jung-Li, TW;

Mu-Yi Lin, Taichung, TW;

Tzong-Sheng Chang, Chubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/285 (2006.01); H01L 23/00 (2006.01); H01L 23/532 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76849 (2013.01); H01L 21/02271 (2013.01); H01L 21/28008 (2013.01); H01L 21/2855 (2013.01); H01L 21/28556 (2013.01); H01L 21/31116 (2013.01); H01L 21/76807 (2013.01); H01L 21/76843 (2013.01); H01L 21/76846 (2013.01); H01L 21/76877 (2013.01); H01L 23/53238 (2013.01); H01L 24/00 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 21/28562 (2013.01); H01L 23/53228 (2013.01); H01L 2221/1015 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0361 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/05027 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05186 (2013.01); H01L 2224/05559 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05684 (2013.01); H01L 2924/00 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/013 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/04953 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/13091 (2013.01);
Abstract

An apparatus includes a plurality of interconnect structures over a substrate, a dielectric layer formed over a top metal line of the plurality of interconnect structures, a first barrier layer on a bottom and sidewalls of an opening in the dielectric layer, wherein the first barrier layer is formed of a first material and has a first thickness, a second barrier layer over the first barrier layer, wherein the second barrier layer is formed of a second material different from the first material and has a second thickness and a pad over the second barrier layer, wherein the pad is formed of a third material.


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