Hsuan-Han Lin

Title: Hsuan-Han Lin: Innovator in Interconnect Structures

Introduction

Hsuan-Han Lin is a prominent inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of interconnect structures. With a total of 4 patents to his name, Lin's work has been influential in advancing the capabilities of electronic devices.

Latest Patents

One of Hsuan-Han Lin's latest patents is a method for forming interconnect structures. This innovative apparatus includes a plurality of interconnect structures over a substrate, with a dielectric layer formed over a top metal line of these structures. The design features a first barrier layer on the bottom and sidewalls of an opening in the dielectric layer, made from a first material with a specific thickness. Additionally, a second barrier layer is placed over the first, composed of a different material and thickness, topped with a pad made from a third material. This method enhances the reliability and performance of interconnects in semiconductor devices.

Career Highlights

Hsuan-Han Lin is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this company has allowed him to focus on innovative solutions that address the challenges faced in semiconductor manufacturing.

Collaborations

Throughout his career, Lin has collaborated with notable colleagues, including Bor-Zen Tien and Jhu-Ming Song. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and advancements in technology.

Conclusion

Hsuan-Han Lin's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His work continues to shape the future of electronic devices and interconnect structures.