The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2017
Filed:
Oct. 20, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Bor-Zen Tien, Hsin-Chu, TW;
Jhu-Ming Song, Nantou, TW;
Hsuan-Han Lin, Kaohsiung, TW;
Kuang-Hsin Chen, Jung-Li, TW;
Mu-Yi Lin, Taichung, TW;
Tzong-Sheng Chang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method comprises forming a plurality of interconnect components over a gate structure, wherein a bottom metal line of the interconnect components is connected to the gate structure through a gate plug, depositing a dielectric layer over a top metal line of the interconnect components, forming an opening in the dielectric layer, depositing a first barrier layer on a bottom and sidewalls of the opening using a non-plasma based deposition process, depositing a second barrier layer over the first barrier layer using a plasma based deposition process and forming a pad in the opening.