Taichung, Taiwan

Mu-Yi Lin


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Location History:

  • Hsin-Chu, TW (2005)
  • Taichung, TW (2015 - 2021)

Company Filing History:


Years Active: 2005-2021

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6 patents (USPTO):

Title: The Innovations of Mu-Yi Lin

Introduction

Mu-Yi Lin is a prominent inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work focuses on advanced methods for forming interconnect structures, which are crucial for the performance of electronic devices.

Latest Patents

One of Mu-Yi Lin's latest patents is a method for forming interconnect structures. This invention includes an apparatus with a plurality of interconnect structures over a substrate. A dielectric layer is formed over a top metal line of these interconnect structures. The design features a first barrier layer on the bottom and sidewalls of an opening in the dielectric layer, made from a first material with a specific thickness. Additionally, a second barrier layer is placed over the first, composed of a different material and thickness. Finally, a pad made from a third material is positioned over the second barrier layer.

Career Highlights

Mu-Yi Lin is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His expertise in interconnect structures has positioned him as a key player in the development of innovative semiconductor technologies.

Collaborations

Throughout his career, Mu-Yi Lin has collaborated with notable colleagues, including Bor-Zen Tien and Jhu-Ming Song. These partnerships have further enhanced his contributions to the field.

Conclusion

Mu-Yi Lin's work in semiconductor technology exemplifies the importance of innovation in advancing electronic devices. His patents and collaborations reflect a commitment to excellence in the industry.

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