Hsinchu, Taiwan

Chu-Yun Fu

This inventor holds 42 USPTO granted patents, primarily in Semiconductor Fabrication. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2000-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chu-Yun Fu. Retrieved from https://idiyas.com/inventor/chu-yun-fu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 76.2

Average Co-Inventor Count = 3.4

ph-index = 12

Forward Citations = 962(Granted Patents)


Location History:

  • Taipei, TW (2000 - 2014)
  • Hsinchu, TW (2009 - 2019)

Company Filing History:


Years Active: 2000-2019

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Areas of Expertise:
Semiconductor Device
FinFET
Isolation Structure
Chemical Mechanical Polishing
High Density Plasma
Trench Isolation
Doping
Saturation Current
Dielectric Materials
Polysilicon Gate
Ultra-Shallow Junctions
Plasma Damage
42 patents (USPTO):Explore Patents

Title: Innovations of Chu-Yun Fu in Semiconductor Technologies

Introduction: Chu-Yun Fu is a prominent inventor based in Hsinchu, Taiwan, known for his significant contributions to the semiconductor industry. With an impressive portfolio of 42 patents, Fu has pioneered various methodologies that enhance semiconductor device performance and fabrication.

Latest Patents: Among his latest innovations are several groundbreaking patents. One notable patent is for the "Method of Fabricating Semiconductor Device Isolation Structure." This invention outlines a semiconductor device that integrates reentrant isolation structures, utilizing a substrate of semiconductor material to create profiles that effectively isolate adjacent operational components. The reentrant profile is developed through ion implantation, specifically employing oxygen ions applied at varying angles and energy levels.

Another significant patent is on the "Fin Field Effect Transistor (FinFET)." This device incorporates a first insulation region and a second insulation region, with a fin positioned between them. A gate stack is strategically placed over a specific portion of the fin, while a strained source/drain material overlays another portion. The design ensures an optimal flat top surface extending across both insulation regions, which may also feature a tapered top surface.

Career Highlights: Chu-Yun Fu's career is marked by his role at Taiwan Semiconductor Manufacturing Company Limited, where he continues to drive innovations in semiconductor technology. His expertise and dedication to research and development have established him as a key figure in the field, influencing both current practices and future advancements.

Collaborations: Throughout his career, Fu has collaborated with esteemed colleagues, including Syun-Ming Jang and Chen-Hua Douglas Yu. These partnerships have fostered an environment of shared knowledge and innovation, contributing to the success and advancement of their collective projects.

Conclusion: Chu-Yun Fu's contributions to the field of semiconductors through his 42 patents showcase his vital role as an innovator. His latest patents not only reflect his technical expertise but also his commitment to advancing semiconductor technology. As he continues to work with Taiwan Semiconductor Manufacturing Company Limited, the impact of his work will undoubtedly influence the industry for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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