The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2015
Filed:
Jul. 22, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Hung-Ta Lin, Hsinchu, TW;
Chu-Yun Fu, Hsinchu, TW;
Shin-Yeh Huang, Hsinchu, TW;
Shu-Tine Yang, Jhubei, TW;
Hung-Ming Chen, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A fin field effect transistor including a first insulation region and a second insulation region over a top surface of a substrate. The first insulation region includes tapered top surfaces, and the second insulation region includes tapered top surfaces. The fin field effect transistor further includes a fin extending above the top surface between the first insulation region and the second insulation region. The fin includes a first portion having a top surface below the tapered top surfaces of the first insulation region. The fin includes a second portion having a top surface above the tapered top surfaces of the first insulation region.