Shin-Yeh Huang

Title: Innovations of Shin-Yeh Huang

Introduction

Shin-Yeh Huang is a prominent inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. His work focuses on developing advanced semiconductor device structures that enhance performance and efficiency.

Latest Patents

Among his latest patents is a method for forming semiconductor device structures. This innovation includes a gate stack structure formed on a substrate, along with an isolation structure integrated within the substrate. Additionally, it features a source/drain stressor structure positioned between the gate stack and the isolation structure, complemented by a metal silicide layer on the source/drain stressor structure. Notably, a portion of this metal silicide layer is situated below the top surface of the isolation structure. Another significant patent is for a fin field effect transistor (FinFET), which comprises a first insulation region and a second insulation region with a fin in between. This design includes a gate stack over a portion of the fin and a strained source/drain material over another portion, ensuring a flat top surface that extends across both insulation regions.

Career Highlights

Shin-Yeh Huang is currently employed at Taiwan Semiconductor Manufacturing Company Ltd., a leading firm in the semiconductor industry. His expertise and innovative approach have positioned him as a key player in the development of cutting-edge semiconductor technologies.

Collaborations

He has collaborated with notable colleagues, including Hung-Ta Lin and Chu-Yun Fu, contributing to various projects that push the boundaries of semiconductor research and development.

Conclusion

Shin-Yeh Huang's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to shape the future of semiconductor devices, making significant strides in innovation.