The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2015
Filed:
Dec. 27, 2013
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Shin-Yeh Huang, Taichung, TW;
Kai-Hsiang Chang, Taichung, TW;
Chih-Chen Jiang, New Taipei, TW;
Yi-Wei Peng, Taichung, TW;
Kuan-Yu Lin, Taichung, TW;
Ming-Shan Tsai, Xizhou Township, TW;
Ching-Lun Lai, Taichung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsin-Chu, TW;
Abstract
Embodiments for forming a semiconductor device structure are provided. The semiconductor device structure includes a substrate and a gate stack structure formed on the substrate. The semiconductor device structure also includes gate spacers formed on sidewalls of the gate stack structure. The semiconductor device structure further includes an isolation structure formed in the substrate and a source/drain stressor structure formed adjacent to the isolation structure. The source/drain stressor structure includes a capping layer which is formed along the (311) and (111) crystal orientations.