The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2016
Filed:
Oct. 29, 2015
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Shin-Yeh Huang, Taichung, TW;
Kai-Hsiang Chang, Taichung, TW;
Chih-Chen Jiang, New Taipei, TW;
Yi-Wei Peng, Taichung, TW;
Kuan-Yu Lin, Taichung, TW;
Ming-Shan Tsai, Xizhou Township, TW;
Ching-Lun Lai, Taichung, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
Methods for forming a semiconductor device structure are provided. The method includes providing a substrate and forming an isolation structure in the substrate. The method also includes forming a gate stack structure on the substrate and etching a portion of the substrate to form a recess in the substrate, and the recess is adjacent to the gate stack structure. The method includes forming a stressor layer in the recess, and a portion of the stressor layer is grown along the (311) and (111) crystal orientations.