The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2013
Filed:
Oct. 13, 2010
Hung-ta Lin, Hsinchu, TW;
Chu-yun Fu, Hsinchu, TW;
Shin-yeh Huang, Hsinchu, TW;
Shu-tine Yang, Jhubei, TW;
Hung-ming Chen, Hsinchu, TW;
Hung-Ta Lin, Hsinchu, TW;
Chu-Yun Fu, Hsinchu, TW;
Shin-Yeh Huang, Hsinchu, TW;
Shu-Tine Yang, Jhubei, TW;
Hung-Ming Chen, Hsinchu, TW;
Abstract
The disclosure relates to a fin field effect transistor (FinFET). An exemplary structure for a FinFET comprises a substrate comprising a top surface; a first insulation region and a second insulation region over the substrate top surface comprising tapered top surfaces; a fin of the substrate extending above the substrate top surface between the first and second insulation regions, wherein the fin comprises a recessed portion having a top surface lower than the tapered top surfaces of the first and second insulation regions, wherein the fin comprises a non-recessed portion having a top surface higher than the tapered top surfaces; and a gate stack over the non-recessed portion of the fin.