The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Dec. 07, 2015
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Hung-Ta Lin, Hsinchu, TW;
Chu-Yun Fu, Hsinchu, TW;
Hung-Ming Chen, Zhubei, TW;
Shu-Tine Yang, Taichung, TW;
Shin-Yeh Huang, Taichung, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66636 (2013.01); H01L 21/02293 (2013.01); H01L 29/66795 (2013.01);
Abstract
A method of fabricating a fin field effect transistor (FinFET) including forming a first insulation region and a second insulation region and fin there between. The method further includes forming a gate stack over a portion of the fin and over a portion of the first and second insulation regions. The method further includes tapering the top surfaces of the first and second insulation regions not covered by the gate stack.