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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9716091 B1

PDFFull Text
Date of Patent:
Jul. 25, 2017

Filed:

Jun. 27, 2016

Fin field effect transistor

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Hung-Ta Lin, Hsinchu, TW;

Chu-Yun Fu, Hsinchu, TW;

Hung-Ming Chen, Hsinchu County, TW;

Shu-Tine Yang, Taichung, TW;

Shin-Yeh Huang, Taichung, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Haynes and Boone, LLP

Primary Examiner:

Michael Lebentritt

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/02293 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7842 (2013.01); H01L 29/7848 (2013.01); H01L 29/7855 (2013.01); H01L 29/165 (2013.01);
Abstract

A fin field effect transistor (FinFET) including a first insulation region and a second insulation region and fin there between. A gate stack is disposed over a first portion of the fin. A strained source/drain material is disposed over a second portion of the fin. The strained source/drain material has a flat top surface extending over the first and second insulation regions. The first insulation region may include a tapered top surface.

Find Patent Forward Citations

Lin, Hung-Ta. (2017). Fin field effect transistor (U.S. Patent No. 9716091). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9716091

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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