The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2011
Filed:
Mar. 28, 2007
Chen-hua Yu, Hsin-Chu, TW;
Ding-yuan Chen, Taichung, TW;
Chu-yun Fu, Hsinchu, TW;
Liang-gi Yao, Hsinchu, TW;
Chen-nan Yeh, Hsi-Chih, TW;
Chen-Hua Yu, Hsin-Chu, TW;
Ding-Yuan Chen, Taichung, TW;
Chu-Yun Fu, Hsinchu, TW;
Liang-Gi Yao, Hsinchu, TW;
Chen-Nan Yeh, Hsi-Chih, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for forming a semiconductor structure includes providing a semiconductor substrate; forming a gate dielectric layer on the semiconductor substrate; forming a first silicon-containing layer on the gate dielectric layer, wherein the first silicon-containing layer is substantially free from p-type and n-type impurities; forming a second silicon-containing layer over the first silicon-containing layer, wherein the second silicon-containing layer comprises an impurity; and performing an annealing to diffuse the impurity in the second silicon-containing layer into the first silicon-containing layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile