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Chen-Nan Yeh

This inventor holds 44 USPTO granted patents, primarily in FinFET Technology. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2004-2021.

USPTO Granted Patents = 44

% Patents Active = 54.5

Average Co-Inventor Count = 3.8

ph-index = 15

Forward Citations = 1,446(Granted Patents)

Location History:

Taipei County, TW (2006)
Taipei, TW (2004 - 2007)
Hsin Chih, TW (2009)
Hsi-chi, TW (2009)
Sinford Township, TW (2017)
Hsi-Chih, TW (2008 - 2021)
Sinfong Township, TW (2014 - 2021)

Company Filing History:

44 out of 42,711

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2004-2021

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Areas of Expertise:

FinFETs

Dielectric Punch-Through Stoppers

Source/Drain Processing

Resistance Reduction

Semiconductor Device

Multiple Fin Heights

Germanium FinFETs

Hybrid Metal FUSI Gate

Dual Damascene Process

Polysilicon Gate Formation

Stacked Contact

Isolation Structure

44 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11133387 - FinFETs having dielectric punch-through stoppers (2021-09-28),

2. 11038056 - System and method for source/drain contact processing (2021-06-15),

3. 10312327 - FinFETs having dielectric punch-through stoppers (2019-06-04),

4. 10269616 - Method of fabricating semiconductor device isolation structure (2019-04-23),

5. 9735042 - Dielectric punch-through stoppers for forming FinFETs having dual Fin heights (2017-08-15),

6. 9722025 - FinFETs having dielectric punch-through stoppers (2017-08-01),

7. 9673082 - Method of fabricating semiconductor device isolation structure (2017-06-06),

8. 9601587 - Semiconductor device having elevated structure (2017-03-21),

9. 9299785 - Reducing resistance in source and drain regions of FinFETs (2016-03-29),

10. 9230959 - FinFETs having dielectric punch-through stoppers (2016-01-05),

11. 9224606 - Method of fabricating semiconductor device isolation structure (2015-12-29),

12. 9076689 - Reducing resistance in source and drain regions of FinFETs (2015-07-07),

13. 9048259 - Dielectric punch-through stoppers for forming FinFETs having dual fin heights (2015-06-02),

14. 8957477 - Germanium FinFETs having dielectric punch-through stoppers (2015-02-17),

15. 8946828 - Semiconductor device having elevated structure and method of manufacturing the same (2015-02-03),

Title: Chen-Nan Yeh: Innovator from Hsi-Chih

Introduction: Chen-Nan Yeh is a renowned inventor hailing from Hsi-Chih, Taiwan. His innovative spirit and dedication to creating cutting-edge solutions have made him a prominent figure in the world of technology and patents.

Latest Patents: Chen-Nan Yeh holds several patents in the field of electronics and telecommunications, with his most recent inventions focusing on sustainable energy solutions and smart home technologies.

Career Highlights: Throughout his career, Chen-Nan Yeh has worked with leading tech companies to develop groundbreaking products that have revolutionized the industry. His expertise in research and development has led to the creation of numerous successful innovations.

Collaborations: Chen-Nan Yeh has collaborated with top researchers, engineers, and designers to bring his ideas to life. His ability to work effectively in multidisciplinary teams has resulted in the successful implementation of his inventions.

Conclusion: Chen-Nan Yeh's passion for innovation and his commitment to pushing the boundaries of technology have solidified his reputation as a visionary inventor. His contributions to the field continue to inspire future generations of inventors and innovators.

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