The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2016

Filed:

Jun. 17, 2015
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Chen-Hua Yu, Hsin-Chu, TW;

Yu-Rung Hsu, Tainan, TW;

Chen-Nan Yeh, Hsi-Chih, TW;

Cheng-Hung Chang, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1033 (2013.01); H01L 27/0886 (2013.01); H01L 27/1211 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract

A semiconductor structure includes a semiconductor fin on a top surface of a substrate, wherein the semiconductor fin includes a middle section having a first width; and a first and a second end section connected to opposite ends of the middle section, wherein the first and the second end sections each comprises at least a top portion having a second width greater than the first width. The semiconductor structure further includes a gate dielectric layer on a top surface and sidewalls of the middle section of the semiconductor fin; and a gate electrode on the gate dielectric layer.


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