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Cheng-Hung Chang

This inventor holds 39 USPTO granted patents, primarily in FinFET Technology. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., United Microelectronics Corp., Other. Active years: 2006-2023.

USPTO Granted Patents = 39

% Patents Active = 66.7

Average Co-Inventor Count = 4.1

ph-index = 11

Forward Citations = 670(Granted Patents)

Location History:

Hsin-Chu Hsien, TW (2007)
Hsin-Chu, TW (2006 - 2023)

Company Filing History:

34 out of 42,711

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

4 out of 7,255

United Microelectronics Corp.

patents

1 out of 834,350

Other

patents

Years Active: 2006-2023

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Areas of Expertise:

FinFETs

Through-Silicon Vias

Low Junction Capacitance

Dielectric Punch-Through Stoppers

Non-Planar Transistors

Ion Implantation

Metal Salicide Formation

Hybrid Metal Fully Silicided Gate

Source/Drain Contact Processing

Semiconductor Devices

Resistance Reduction

Germanium FinFETs

39 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11545392 - Semiconductor component having through-silicon vias (2023-01-03),

2. 11133387 - FinFETs having dielectric punch-through stoppers (2021-09-28),

3. 11114563 - Semiconductor devices with low junction capacitances and methods of fabrication thereof (2021-09-07),

4. 11038056 - System and method for source/drain contact processing (2021-06-15),

5. 10784162 - Method of making a semiconductor component having through-silicon vias (2020-09-22),

6. 10312327 - FinFETs having dielectric punch-through stoppers (2019-06-04),

7. 10115634 - Semiconductor component having through-silicon vias and method of manufacture (2018-10-30),

8. 9935197 - Semiconductor devices with low junction capacitances (2018-04-03),

9. 9735276 - Non-planar transistors and methods of fabrication thereof (2017-08-15),

10. 9735042 - Dielectric punch-through stoppers for forming FinFETs having dual Fin heights (2017-08-15),

11. 9722025 - FinFETs having dielectric punch-through stoppers (2017-08-01),

12. 9418923 - Semiconductor component having through-silicon vias and method of manufacture (2016-08-16),

13. 9411070 - Extendable wireless soil measurement apparatus (2016-08-09),

14. 9299785 - Reducing resistance in source and drain regions of FinFETs (2016-03-29),

15. 9230959 - FinFETs having dielectric punch-through stoppers (2016-01-05),

Title: The Innovative Journey of Cheng-Hung Chang

Introduction:

Cheng-Hung Chang, a distinguished inventor hailing from Hsin-Chu, Taiwan, has made significant contributions to the field of technology and innovation.

Latest Patents:

Chang's latest patents include groundbreaking inventions in the fields of semiconductor technology and renewable energy, showcasing his commitment to pushing the boundaries of technological advancement.

Career Highlights:

With a career spanning over two decades, Cheng-Hung Chang has held key positions in leading tech companies, where he spearheaded research and development projects that have led to numerous patents and innovations.

Collaborations:

Throughout his career, Chang has collaborated with top researchers, engineers, and scientists from around the world, fostering a culture of innovation and knowledge-sharing that has been instrumental in his success as an inventor.

Conclusion:

In conclusion, Cheng-Hung Chang's relentless pursuit of innovation and his passion for creating cutting-edge technologies have solidified his reputation as a visionary inventor in the global tech community.

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