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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10784162 B1

PDFFull Text
Date of Patent:
Sep. 22, 2020

Filed:

Oct. 23, 2018

Method of making a semiconductor component having through-silicon vias

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chen-Hua Yu, Hsinchu, TW;

Cheng-Hung Chang, Hsinchu, TW;

Ebin Liao, Xinzhu, TW;

Chia-Lin Yu, Sigang Township, TW;

Hsiang-Yi Wang, Hsinchu, TW;

Chun Hua Chang, Zhubei, TW;

Li-Hsien Huang, Puzi, TW;

Darryl Kuo, Hsinchu, TW;

Tsang-Jiuh Wu, Hsinchu, TW;

Wen-Chih Chiou, Toufen, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Hauptman Ham, LLP

Primary Examiner:

David A Zarneke

Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/498 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/3105 (2006.01); H01L 21/321 (2006.01); H01L 25/065 (2006.01); H01L 25/11 (2006.01); H01L 23/538 (2006.01); H01L 25/04 (2014.01); H01L 25/07 (2006.01); H01L 25/075 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 21/02271 (2013.01); H01L 21/02274 (2013.01); H01L 21/30625 (2013.01); H01L 21/31053 (2013.01); H01L 21/3212 (2013.01); H01L 21/76844 (2013.01); H01L 21/76846 (2013.01); H01L 23/481 (2013.01); H01L 23/49827 (2013.01); H01L 21/76831 (2013.01); H01L 21/76832 (2013.01); H01L 23/5383 (2013.01); H01L 23/5384 (2013.01); H01L 23/5385 (2013.01); H01L 23/5386 (2013.01); H01L 25/043 (2013.01); H01L 25/0655 (2013.01); H01L 25/072 (2013.01); H01L 25/0753 (2013.01); H01L 25/115 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06544 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method of making a semiconductor component includes etching a substrate to define an opening. The method further includes depositing a first dielectric liner in the opening, wherein the first dielectric liner has a first stress. The method further includes depositing a second dielectric liner over the first dielectric liner, wherein the second dielectric liner has a second stress, and a direction of the first stress is opposite a direction of the second stress. The method further includes depositing a conductive material over the second dielectric liner.

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