The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Sep. 23, 2013
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Chen-Hua Yu, Hsinchu, TW;
Cheng-Hung Chang, Hsinchu, TW;
Ebin Liao, Xinzhu, TW;
Chia-Lin Yu, Sigang Township, TW;
Hsiang-Yi Wang, Hsinchu, TW;
Chun Hua Chang, Zhubie, TW;
Li-Hsien Huang, Puzi, TW;
Darryl Kuo, Hsinchu, TW;
Tsang-Jiuh Wu, Hsinchu, TW;
Wen-Chih Chiou, Toufen, TW;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/498 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49827 (2013.01); H01L 21/76846 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 21/76831 (2013.01); H01L 21/76832 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06544 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor component includes a semiconductor substrate having an opening A first dielectric liner having a first compressive stress is disposed in the opening. A second dielectric liner having a tensile stress is disposed on the first dielectric liner. A third dielectric liner having a second compressive stress disposed on the second dielectric liner.