The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2017
Filed:
Jun. 14, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Chih-Hang Tung, Hsin-Chu, TW;
Chin-Hsiang Lin, Hsin-Chu, TW;
Cheng-Hung Chang, Hsin-Chu, TW;
Sey-Ping Sun, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Non-planar transistors and methods of fabrication thereof are described. In an embodiment, a method of forming a non-planar transistor includes forming a channel region on a first portion of a semiconductor fin, the semiconductor fin having a top surface and sidewalls. A gate electrode is formed over the channel region of the semiconductor fin, and an in-situ doped semiconductor layer is grown on the top surface and the sidewalls of the semiconductor fin on opposing sides of the gate electrode using a selective epitaxial growth process. At least a part of the doped semiconductor layer is converted to form a dopant rich region.